Crucible for InP crystal growth and InP crystal growth method
The invention discloses a crucible for InP crystal growth and an InP crystal growth method, the crucible for InP crystal growth comprises a first crucible, a crucible cap and a second crucible; the first crucible is a hollow quartz tube which is formed by a first body part, a first shoulder part and...
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| creator | KE ZUNBIN WANG QINGWEI LUO FUMIN |
| description | The invention discloses a crucible for InP crystal growth and an InP crystal growth method, the crucible for InP crystal growth comprises a first crucible, a crucible cap and a second crucible; the first crucible is a hollow quartz tube which is formed by a first body part, a first shoulder part and a first seed crystal cavity in sequence from top to bottom and is provided with an upward opening; the second crucible is a hollow PBN ceramic crucible which consists of a second body part, a second shoulder part, a necking cavity and a second seed crystal cavity in sequence from top to bottom, and the upper end and the lower end of the second crucible are opened; the second crucible is positioned on the inner side of the first crucible, the second body part is positioned on the inner side of the first body part, the second shoulder part is positioned on the inner side of the first shoulder part, and a necking cavity and a second seed crystal cavity are positioned on the inner side of the first seed crystal cavity |
| format | Patent |
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the first crucible is a hollow quartz tube which is formed by a first body part, a first shoulder part and a first seed crystal cavity in sequence from top to bottom and is provided with an upward opening; the second crucible is a hollow PBN ceramic crucible which consists of a second body part, a second shoulder part, a necking cavity and a second seed crystal cavity in sequence from top to bottom, and the upper end and the lower end of the second crucible are opened; the second crucible is positioned on the inner side of the first crucible, the second body part is positioned on the inner side of the first body part, the second shoulder part is positioned on the inner side of the first shoulder part, and a necking cavity and a second seed crystal cavity are positioned on the inner side of the first seed crystal cavity</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; 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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Crucible for InP crystal growth and InP crystal growth method |
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