Method for forming semiconductor device

A semiconductor device and a method of forming the same are provided. The method includes forming a fin extending from a substrate and forming a gate dielectric layer along a top surface and sidewalls of the fin. The first thickness of the gate dielectric layer along the top surface of the fin is gr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YU XIONGFEI, LIN KUILUN, LIN BAITING, CHEN YANFU, XU ZHI'AN, ZHANG JIAYUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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