Thermal field of silicon carbide raw material synthesis furnace and synthesis furnace

The invention discloses a thermal field of a silicon carbide raw material synthesis furnace. The thermal field comprises a crucible main heater, an auxiliary heater, a protective cylinder and a gas circuit pipe, the protective cylinder comprises a protective cylinder side wall surrounding the circum...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LU WENDONG, LI HUI, YANG QIAN, GUO ZHIQIANG, MAO RUICHUAN, YE YINGHAI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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