Semiconductor device and manufacturing method thereof

The embodiment of the invention provides a semiconductor device and a manufacturing method, in which a metallization layer is located above a substrate and a power grid line is located in the metallization layer. A signal pad is located within the metallization layer, and the signal pad is surrounded by the power grid lines. The signal external connector is electrically connected to the signal pad. Another embodiment of the present invention provides a method of manufacturing a semiconductor device. 本发明的实施例提供了一种半导体器件以及制造方法，其中，金属化层位于衬底上方，电源网格线位于金属化层内。信号焊盘位于金属化层内，并且信号焊盘由电源网格线围绕。信号外部连接件电连接至信号焊盘。本发明的实施例另一方面提供一种制造半导体器件的方法。