Method for plating metal on ceramic side wall
The invention discloses a method for plating metal on a ceramic side wall. The method comprises the following steps of (1) opening a hole; (2) surface metallizing; (3) pasting a dry film, specifically, a pattern is made, and bottom copper is exposed out of a through hole or a blind hole where side w...
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creator | YUAN GUANG LI SHENGWU LUO SUPU HUANG JIAHUA |
description | The invention discloses a method for plating metal on a ceramic side wall. The method comprises the following steps of (1) opening a hole; (2) surface metallizing; (3) pasting a dry film, specifically, a pattern is made, and bottom copper is exposed out of a through hole or a blind hole where side wall metal needs to be made; (4) metal thickening; (5) stripping and etching to obtain a pattern; (6)cutting, specifically, the cutting position where the side wall needs to be made, and the cutting width during cutting cannot be larger than the size of the hole; and (7) grounding burrs on the sideedges, and obtaining the side wall metal. According to the method for plating metal on the ceramic side wall, the blind hole or the through hole is made in a ceramic chip, a seed metal layer is made on the blind hole/through hole, electroplating thickening is conducted, cutting is conducted finally, the process is simple, mass production is easy, sintering or die manufacturing is not needed, the cost is equivalent to that |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN112501565A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN112501565A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN112501565A3</originalsourceid><addsrcrecordid>eNrjZND1TS3JyE9RSMsvUijISSzJzEtXyE0tScxRyM9TSE4tSszNTFYozkxJVShPzMnhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhkamBoamZqaOxsSoAQCN4ymY</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for plating metal on ceramic side wall</title><source>esp@cenet</source><creator>YUAN GUANG ; LI SHENGWU ; LUO SUPU ; HUANG JIAHUA</creator><creatorcontrib>YUAN GUANG ; LI SHENGWU ; LUO SUPU ; HUANG JIAHUA</creatorcontrib><description>The invention discloses a method for plating metal on a ceramic side wall. The method comprises the following steps of (1) opening a hole; (2) surface metallizing; (3) pasting a dry film, specifically, a pattern is made, and bottom copper is exposed out of a through hole or a blind hole where side wall metal needs to be made; (4) metal thickening; (5) stripping and etching to obtain a pattern; (6)cutting, specifically, the cutting position where the side wall needs to be made, and the cutting width during cutting cannot be larger than the size of the hole; and (7) grounding burrs on the sideedges, and obtaining the side wall metal. According to the method for plating metal on the ceramic side wall, the blind hole or the through hole is made in a ceramic chip, a seed metal layer is made on the blind hole/through hole, electroplating thickening is conducted, cutting is conducted finally, the process is simple, mass production is easy, sintering or die manufacturing is not needed, the cost is equivalent to that</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210316&DB=EPODOC&CC=CN&NR=112501565A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210316&DB=EPODOC&CC=CN&NR=112501565A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUAN GUANG</creatorcontrib><creatorcontrib>LI SHENGWU</creatorcontrib><creatorcontrib>LUO SUPU</creatorcontrib><creatorcontrib>HUANG JIAHUA</creatorcontrib><title>Method for plating metal on ceramic side wall</title><description>The invention discloses a method for plating metal on a ceramic side wall. The method comprises the following steps of (1) opening a hole; (2) surface metallizing; (3) pasting a dry film, specifically, a pattern is made, and bottom copper is exposed out of a through hole or a blind hole where side wall metal needs to be made; (4) metal thickening; (5) stripping and etching to obtain a pattern; (6)cutting, specifically, the cutting position where the side wall needs to be made, and the cutting width during cutting cannot be larger than the size of the hole; and (7) grounding burrs on the sideedges, and obtaining the side wall metal. According to the method for plating metal on the ceramic side wall, the blind hole or the through hole is made in a ceramic chip, a seed metal layer is made on the blind hole/through hole, electroplating thickening is conducted, cutting is conducted finally, the process is simple, mass production is easy, sintering or die manufacturing is not needed, the cost is equivalent to that</description><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND1TS3JyE9RSMsvUijISSzJzEtXyE0tScxRyM9TSE4tSszNTFYozkxJVShPzMnhYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhkamBoamZqaOxsSoAQCN4ymY</recordid><startdate>20210316</startdate><enddate>20210316</enddate><creator>YUAN GUANG</creator><creator>LI SHENGWU</creator><creator>LUO SUPU</creator><creator>HUANG JIAHUA</creator><scope>EVB</scope></search><sort><creationdate>20210316</creationdate><title>Method for plating metal on ceramic side wall</title><author>YUAN GUANG ; LI SHENGWU ; LUO SUPU ; HUANG JIAHUA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112501565A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YUAN GUANG</creatorcontrib><creatorcontrib>LI SHENGWU</creatorcontrib><creatorcontrib>LUO SUPU</creatorcontrib><creatorcontrib>HUANG JIAHUA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUAN GUANG</au><au>LI SHENGWU</au><au>LUO SUPU</au><au>HUANG JIAHUA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for plating metal on ceramic side wall</title><date>2021-03-16</date><risdate>2021</risdate><abstract>The invention discloses a method for plating metal on a ceramic side wall. The method comprises the following steps of (1) opening a hole; (2) surface metallizing; (3) pasting a dry film, specifically, a pattern is made, and bottom copper is exposed out of a through hole or a blind hole where side wall metal needs to be made; (4) metal thickening; (5) stripping and etching to obtain a pattern; (6)cutting, specifically, the cutting position where the side wall needs to be made, and the cutting width during cutting cannot be larger than the size of the hole; and (7) grounding burrs on the sideedges, and obtaining the side wall metal. According to the method for plating metal on the ceramic side wall, the blind hole or the through hole is made in a ceramic chip, a seed metal layer is made on the blind hole/through hole, electroplating thickening is conducted, cutting is conducted finally, the process is simple, mass production is easy, sintering or die manufacturing is not needed, the cost is equivalent to that</abstract><oa>free_for_read</oa></addata></record> |
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language | chi ; eng |
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subjects | APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | Method for plating metal on ceramic side wall |
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