Memory control method, memory storage device and memory control circuit unit

The invention provides a memory control method, a memory storage device and a memory control circuit unit. The method comprises the following steps: caching a first type of data in a buffer memory, wherein the first type of data is stored in a rewritable nonvolatile memory module in a first programming mode by default; when the first type of data is cached in the buffer memory, caching the secondtype of data in the buffer memory, wherein the second type of data is default to be stored in the reproducible nonvolatile memory module in a second programming mode; in the buffer memory, if the datasize of the first type of data does not reach the first threshold value and the data size of the second type of data reaches the second threshold value, storing the first type of data in the buffer memory in the rewritable nonvolatile memory module, so that the management efficiency of the cache data is improved. 本发明提供一种存储器控制方法、存储器存储装置及存储器控制电路单元。所述方法包括：将第一类数据缓存于缓冲存储器，其中第一类数据默认是以第一编程模式存储至可复写式非易失性存储器模块；在第一类数据缓存于缓冲存储器的状态下，将第