APPARATUS AND METHOD FOR TREATING SUBSTRATE
The invention provides an apparatus and method for treating a substrate. The inventive concept relates to a method for treating the substrate. In an embodiment, a method for etching the substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatmen...
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| creator | BANG BYUNG-SUN LEE YOUNG-IL |
| description | The invention provides an apparatus and method for treating a substrate. The inventive concept relates to a method for treating the substrate. In an embodiment, a method for etching the substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etchingprocess.
本发明提供了一种用于处理基板的设备和方法。本发明构思涉及一种处理基板的方法。在一个实施例中，一种用于蚀刻具有氮化硅层的基板的方法包括：通过将具有设定温度和设定浓度的第一处理液分配到加热到设定温度的基板上来蚀刻氮化硅层，其中，在氮化硅层蚀刻工艺中分配第一处理液的同时，以重叠的方式在设定时间段内另外分配第二处理液。 |
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本发明提供了一种用于处理基板的设备和方法。本发明构思涉及一种处理基板的方法。在一个实施例中，一种用于蚀刻具有氮化硅层的基板的方法包括：通过将具有设定温度和设定浓度的第一处理液分配到加热到设定温度的基板上来蚀刻氮化硅层，其中，在氮化硅层蚀刻工艺中分配第一处理液的同时，以重叠的方式在设定时间段内另外分配第二处理液。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210305&DB=EPODOC&CC=CN&NR=112447557A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210305&DB=EPODOC&CC=CN&NR=112447557A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BANG BYUNG-SUN</creatorcontrib><creatorcontrib>LEE YOUNG-IL</creatorcontrib><title>APPARATUS AND METHOD FOR TREATING SUBSTRATE</title><description>The invention provides an apparatus and method for treating a substrate. The inventive concept relates to a method for treating the substrate. In an embodiment, a method for etching the substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etchingprocess.
本发明提供了一种用于处理基板的设备和方法。本发明构思涉及一种处理基板的方法。在一个实施例中，一种用于蚀刻具有氮化硅层的基板的方法包括：通过将具有设定温度和设定浓度的第一处理液分配到加热到设定温度的基板上来蚀刻氮化硅层，其中，在氮化硅层蚀刻工艺中分配第一处理液的同时，以重叠的方式在设定时间段内另外分配第二处理液。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB2DAhwDHIMCQ1WcPRzUfB1DfHwd1Fw8w9SCAlydQzx9HNXCA51Cg4BKnHlYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhkYmJuampuaOxsSoAQB6CSUB</recordid><startdate>20210305</startdate><enddate>20210305</enddate><creator>BANG BYUNG-SUN</creator><creator>LEE YOUNG-IL</creator><scope>EVB</scope></search><sort><creationdate>20210305</creationdate><title>APPARATUS AND METHOD FOR TREATING SUBSTRATE</title><author>BANG BYUNG-SUN ; LEE YOUNG-IL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112447557A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BANG BYUNG-SUN</creatorcontrib><creatorcontrib>LEE YOUNG-IL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BANG BYUNG-SUN</au><au>LEE YOUNG-IL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS AND METHOD FOR TREATING SUBSTRATE</title><date>2021-03-05</date><risdate>2021</risdate><abstract>The invention provides an apparatus and method for treating a substrate. The inventive concept relates to a method for treating the substrate. In an embodiment, a method for etching the substrate having a silicon nitride layer includes etching the silicon nitride layer by dispensing a first treatment liquid having a set temperature and a set concentration onto the substrate heated to a set temperature, in which a second treatment liquid is additionally dispensed for a set period of time in an overlapping manner while the first treatment liquid is dispensed in the silicon nitride layer etchingprocess.
本发明提供了一种用于处理基板的设备和方法。本发明构思涉及一种处理基板的方法。在一个实施例中，一种用于蚀刻具有氮化硅层的基板的方法包括：通过将具有设定温度和设定浓度的第一处理液分配到加热到设定温度的基板上来蚀刻氮化硅层，其中，在氮化硅层蚀刻工艺中分配第一处理液的同时，以重叠的方式在设定时间段内另外分配第二处理液。</abstract><oa>free_for_read</oa></addata></record> |
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| title | APPARATUS AND METHOD FOR TREATING SUBSTRATE |
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