Method for forming polycrystalline semiconductor layer

A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch maskto form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plural...

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1. Verfasser:	WU ZHENGXIAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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