Organic salt doped P-type organic thin film transistor and preparation method thereof

The invention discloses an organic salt doped P-type organic thin film transistor and a preparation method thereof. The P-type organic thin film transistor has a top gate bottom contact structure. Thepreparation method comprises the following steps: preparing a layer of gold as a source electrode and a drain electrode on a glass substrate through a mask plate, preparing an organic salt doped P-type organic semiconductor active layer on the gold electrode by using a sol-gel method, and spin-coating a dielectric material on the active layer as an insulating layer; and finally, preparing aluminum on the surface of the insulating layer through a mask to form a gate electrode. Compared with the traditional organic thin film transistor, the organic thin film transistor prepared by the method has the advantages that the switching ratio and the carrier mobility are obviously improved, and the threshold voltage and the contact resistance of the device are greatly reduced. The electrical property of the P-type organic