THIN-FILM RESISTOR IN AN INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF

A method for manufacturing a thin film resistor (TFR) module in an integrated circuit (IC) structure is provided. A TFR trench may be formed in an oxide layer. A resistive TFR layer may be deposited over the structure and extending into the trench. Portions of the TFR layer outside the trench may be removed by CMP to define a TFR element including a laterally- extending TFR bottom region and a plurality of TFR ridges extending upwardly from the laterally-extending TFR bottom region. At least one CMP may be performed to remove all or portions of the oxide layer and at least a partial height ofthe TFR ridges. A pair of spaced- apart metal interconnects may then be formed over opposing end regions of the TFR element, wherein each metal interconnect contacts a respective upwardly-extending TFR ridge, to thereby define a resistor between the metal interconnects via the TFR element. 一种在集成电路(IC)结构中制造薄膜电阻器(TFR)模块的方法。TFR沟槽可形成于氧化物层中。可在该结构上方沉积电阻TFR层并使其延伸到沟槽中。可通过CMP移除TFR层在沟槽外部的部分以限定TFR元件，该TFR元件包括横向延伸的TFR底部区域和从横向延伸的TFR底部区