PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

Embodiments relate to a plasma processing device and a plasma processing method. A plasma processing device according to one embodiment includes an upper electrode located in a processing chamber; a board that is located in the processing chamber, opposing the upper electrode, and includes a lower electrode, and on which an intended substrate is placed; a radio-frequency power feeder that suppliesradio frequency power in-between the upper electrode and the lower electrode; a dummy ring that surrounds an annular periphery of the intended substrate located on the board; and a cooler that coolsthe dummy ring from a location away from the intended substrate in a boundary region between the dummy ring and the intended substrate. 实施方式涉及一种等离子体处理装置及等离子体处理方法。实施方式的等离子体处理装置具备配置在处理室的上部电极、载置台、高频供电部、虚设环、及冷却部。载置台在处理室内与上部电极对向配置，具有下部电极，且载置晶片。高频供电部对下部电极与上部电极之间供给高频电力。虚设环为包围载置在载置台的晶片的环状周缘部的环状部件。在虚设环与晶片的交界区域中，从自晶片离开的方向侧由冷却部将虚设环冷却。