SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The invention relates to a semiconductor device and a method of manufacturing the semiconductor device. In one example, the semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a ca...
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| creator | LIM GI-TAE KIM JAE-YUN CHOI MYUNG-JEA |
| description | The invention relates to a semiconductor device and a method of manufacturing the semiconductor device. In one example, the semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of theredistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosedherein.
半导体装置及制造半导体装置的方法。在一个实例中，一种半导体结构包括：重新分布结构，所述重新分布结构包括导电结构；腔衬底，所述腔衬底位于所述重新分布结构的顶侧上并且具有腔和接触所述重新分布结构的柱；电子组件，所述电子组件位于所述重新分布结构的顶表面上和所述腔中，其中所述电子组件与所述导电结构电耦合；以及包封件，所述包封件位于所述腔中和所述重新分布结构的所述顶侧上，所述包封件接触所述电子组件的侧面、所述腔的侧面以及所述柱的侧面。本文还公 |
| format | Patent |
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半导体装置及制造半导体装置的方法。在一个实例中，一种半导体结构包括：重新分布结构，所述重新分布结构包括导电结构；腔衬底，所述腔衬底位于所述重新分布结构的顶侧上并且具有腔和接触所述重新分布结构的柱；电子组件，所述电子组件位于所述重新分布结构的顶表面上和所述腔中，其中所述电子组件与所述导电结构电耦合；以及包封件，所述包封件位于所述腔中和所述重新分布结构的所述顶侧上，所述包封件接触所述电子组件的侧面、所述腔的侧面以及所述柱的侧面。本文还公</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210202&DB=EPODOC&CC=CN&NR=112310033A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210202&DB=EPODOC&CC=CN&NR=112310033A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIM GI-TAE</creatorcontrib><creatorcontrib>KIM JAE-YUN</creatorcontrib><creatorcontrib>CHOI MYUNG-JEA</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><description>The invention relates to a semiconductor device and a method of manufacturing the semiconductor device. In one example, the semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of theredistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosedherein.
半导体装置及制造半导体装置的方法。在一个实例中，一种半导体结构包括：重新分布结构，所述重新分布结构包括导电结构；腔衬底，所述腔衬底位于所述重新分布结构的顶侧上并且具有腔和接触所述重新分布结构的柱；电子组件，所述电子组件位于所述重新分布结构的顶表面上和所述腔中，其中所述电子组件与所述导电结构电耦合；以及包封件，所述包封件位于所述腔中和所述重新分布结构的所述顶侧上，所述包封件接触所述电子组件的侧面、所述腔的侧面以及所述柱的侧面。本文还公</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHANdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXwKaBh4E1LTGnOJUXSnMzKLq5hjh76KYW5MenFhckJqfmpZbEO_sZGhoZGxoYGBs7GhOjBgCOeywD</recordid><startdate>20210202</startdate><enddate>20210202</enddate><creator>LIM GI-TAE</creator><creator>KIM JAE-YUN</creator><creator>CHOI MYUNG-JEA</creator><scope>EVB</scope></search><sort><creationdate>20210202</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><author>LIM GI-TAE ; KIM JAE-YUN ; CHOI MYUNG-JEA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112310033A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIM GI-TAE</creatorcontrib><creatorcontrib>KIM JAE-YUN</creatorcontrib><creatorcontrib>CHOI MYUNG-JEA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIM GI-TAE</au><au>KIM JAE-YUN</au><au>CHOI MYUNG-JEA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE</title><date>2021-02-02</date><risdate>2021</risdate><abstract>The invention relates to a semiconductor device and a method of manufacturing the semiconductor device. In one example, the semiconductor structure comprises a redistribution structure comprising a conductive structure, a cavity substrate on a top side of the redistribution structure and having a cavity and a pillar contacting the redistribution structure, an electronic component on the top surface of the redistribution structure and in the cavity, wherein the electronic component is electrically coupled with the conductive structure, and an encapsulant in the cavity and on the top side of theredistribution structure, contacting a lateral side of the electronic component, a lateral side of the cavity, and a lateral side of the pillar. Other examples and related methods are also disclosedherein.
半导体装置及制造半导体装置的方法。在一个实例中，一种半导体结构包括：重新分布结构，所述重新分布结构包括导电结构；腔衬底，所述腔衬底位于所述重新分布结构的顶侧上并且具有腔和接触所述重新分布结构的柱；电子组件，所述电子组件位于所述重新分布结构的顶表面上和所述腔中，其中所述电子组件与所述导电结构电耦合；以及包封件，所述包封件位于所述腔中和所述重新分布结构的所述顶侧上，所述包封件接触所述电子组件的侧面、所述腔的侧面以及所述柱的侧面。本文还公</abstract><oa>free_for_read</oa></addata></record> |
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| title | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
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