Semiconductor device structure
The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a semiconductor substrate and a first well disposed within the semiconductor substrate, and the first well has a first conductivity type. The semiconductor device structure also inc...
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| creator | HUANG YEREN QIU JUNRONG LI JIANXING LIN WENXIN |
| description | The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a semiconductor substrate and a first well disposed within the semiconductor substrate, and the first well has a first conductivity type. The semiconductor device structure also includes a first doped region embedded in the first well, and the first doped region has a second conductive type different from the first conductivity type. The semiconductor device structure further includes a second well having the second conductivity type. In addition, the semiconductor device structure comprises a first metal electrode and a second metal electrode, and the first metal electrode is arranged on the first doped region of the semiconductor substrate. The second metal electrode isdisposed on the second well of the semiconductor substrate. The invention provides the semiconductor device structure, a well is arranged in a region electrically connected to a high-voltage end to replace a doped region with |
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The semiconductor device structure includes a semiconductor substrate and a first well disposed within the semiconductor substrate, and the first well has a first conductivity type. The semiconductor device structure also includes a first doped region embedded in the first well, and the first doped region has a second conductive type different from the first conductivity type. The semiconductor device structure further includes a second well having the second conductivity type. In addition, the semiconductor device structure comprises a first metal electrode and a second metal electrode, and the first metal electrode is arranged on the first doped region of the semiconductor substrate. The second metal electrode isdisposed on the second well of the semiconductor substrate. The invention provides the semiconductor device structure, a well is arranged in a region electrically connected to a high-voltage end to replace a doped region with</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210129&DB=EPODOC&CC=CN&NR=112289844A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210129&DB=EPODOC&CC=CN&NR=112289844A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG YEREN</creatorcontrib><creatorcontrib>QIU JUNRONG</creatorcontrib><creatorcontrib>LI JIANXING</creatorcontrib><creatorcontrib>LIN WENXIN</creatorcontrib><title>Semiconductor device structure</title><description>The embodiment of the invention provides a semiconductor device structure. The semiconductor device structure includes a semiconductor substrate and a first well disposed within the semiconductor substrate, and the first well has a first conductivity type. The semiconductor device structure also includes a first doped region embedded in the first well, and the first doped region has a second conductive type different from the first conductivity type. The semiconductor device structure further includes a second well having the second conductivity type. In addition, the semiconductor device structure comprises a first metal electrode and a second metal electrode, and the first metal electrode is arranged on the first doped region of the semiconductor substrate. The second metal electrode isdisposed on the second well of the semiconductor substrate. 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The semiconductor device structure includes a semiconductor substrate and a first well disposed within the semiconductor substrate, and the first well has a first conductivity type. The semiconductor device structure also includes a first doped region embedded in the first well, and the first doped region has a second conductive type different from the first conductivity type. The semiconductor device structure further includes a second well having the second conductivity type. In addition, the semiconductor device structure comprises a first metal electrode and a second metal electrode, and the first metal electrode is arranged on the first doped region of the semiconductor substrate. The second metal electrode isdisposed on the second well of the semiconductor substrate. The invention provides the semiconductor device structure, a well is arranged in a region electrically connected to a high-voltage end to replace a doped region with</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device structure |
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