Micro light-emitting diode transfer method
The invention provides a miniature light-emitting diode transfer method, and relates to the field of miniature light-emitting diodes. The method comprises the following steps of: forming a conductivelayer at the bottom of a miniature light-emitting diode to prevent the bottom of the miniature light-...
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| creator | ZHANG LIANGYU WANG XIANNA |
| description | The invention provides a miniature light-emitting diode transfer method, and relates to the field of miniature light-emitting diodes. The method comprises the following steps of: forming a conductivelayer at the bottom of a miniature light-emitting diode to prevent the bottom of the miniature light-emitting diode from being disconnected when the miniature light-emitting diode is etched; etching the width of the bonding layer at the bottom of the micro light-emitting diode to 1/4-1/2 of the width of the micro light-emitting diode to reduce the adsorption force of the conductive layer to the bonding layer at the bottom of the micro light-emitting diode; in addition, by changing the etching sequence of the buffer layer, good flatness of the surface of the micro light-emitting diode during electrostatic transfer is ensured, so that the problem of low pickup rate during transfer is solved.
本发明提出一种微型发光二极管转移方法，涉及微型发光二极管领域，本发明通过在微型发光二极管底部做一层导电层避免刻蚀微型发光二极管时其底部断路；将微型发光二极管底部键合层的宽度刻蚀至微型发光二极管宽度的1/4-1/2，减小导电层对微型发光二极管底部键合层的 |
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本发明提出一种微型发光二极管转移方法，涉及微型发光二极管领域，本发明通过在微型发光二极管底部做一层导电层避免刻蚀微型发光二极管时其底部断路；将微型发光二极管底部键合层的宽度刻蚀至微型发光二极管宽度的1/4-1/2，减小导电层对微型发光二极管底部键合层的</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210126&DB=EPODOC&CC=CN&NR=112271188A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210126&DB=EPODOC&CC=CN&NR=112271188A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHANG LIANGYU</creatorcontrib><creatorcontrib>WANG XIANNA</creatorcontrib><title>Micro light-emitting diode transfer method</title><description>The invention provides a miniature light-emitting diode transfer method, and relates to the field of miniature light-emitting diodes. The method comprises the following steps of: forming a conductivelayer at the bottom of a miniature light-emitting diode to prevent the bottom of the miniature light-emitting diode from being disconnected when the miniature light-emitting diode is etched; etching the width of the bonding layer at the bottom of the micro light-emitting diode to 1/4-1/2 of the width of the micro light-emitting diode to reduce the adsorption force of the conductive layer to the bonding layer at the bottom of the micro light-emitting diode; in addition, by changing the etching sequence of the buffer layer, good flatness of the surface of the micro light-emitting diode during electrostatic transfer is ensured, so that the problem of low pickup rate during transfer is solved.
本发明提出一种微型发光二极管转移方法，涉及微型发光二极管领域，本发明通过在微型发光二极管底部做一层导电层避免刻蚀微型发光二极管时其底部断路；将微型发光二极管底部键合层的宽度刻蚀至微型发光二极管宽度的1/4-1/2，减小导电层对微型发光二极管底部键合层的</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDyzUwuylfIyUzPKNFNzc0sKcnMS1dIycxPSVUoKUrMK05LLVLITS3JyE_hYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxzn6GhkZG5oaGFhaOxsSoAQA29yka</recordid><startdate>20210126</startdate><enddate>20210126</enddate><creator>ZHANG LIANGYU</creator><creator>WANG XIANNA</creator><scope>EVB</scope></search><sort><creationdate>20210126</creationdate><title>Micro light-emitting diode transfer method</title><author>ZHANG LIANGYU ; WANG XIANNA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN112271188A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHANG LIANGYU</creatorcontrib><creatorcontrib>WANG XIANNA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHANG LIANGYU</au><au>WANG XIANNA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Micro light-emitting diode transfer method</title><date>2021-01-26</date><risdate>2021</risdate><abstract>The invention provides a miniature light-emitting diode transfer method, and relates to the field of miniature light-emitting diodes. The method comprises the following steps of: forming a conductivelayer at the bottom of a miniature light-emitting diode to prevent the bottom of the miniature light-emitting diode from being disconnected when the miniature light-emitting diode is etched; etching the width of the bonding layer at the bottom of the micro light-emitting diode to 1/4-1/2 of the width of the micro light-emitting diode to reduce the adsorption force of the conductive layer to the bonding layer at the bottom of the micro light-emitting diode; in addition, by changing the etching sequence of the buffer layer, good flatness of the surface of the micro light-emitting diode during electrostatic transfer is ensured, so that the problem of low pickup rate during transfer is solved.
本发明提出一种微型发光二极管转移方法，涉及微型发光二极管领域，本发明通过在微型发光二极管底部做一层导电层避免刻蚀微型发光二极管时其底部断路；将微型发光二极管底部键合层的宽度刻蚀至微型发光二极管宽度的1/4-1/2，减小导电层对微型发光二极管底部键合层的</abstract><oa>free_for_read</oa></addata></record> |
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| title | Micro light-emitting diode transfer method |
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