Bottom plate of ion source arc chamber of implanter

The invention provides a bottom plate of an ion source arc chamber of an implanter, and the bottom plate comprises the ion source arc chamber (3) of the implanter; a bottom plate (1) is arranged in the ion source arc chamber (3) of the implanter. The bottom plate is characterized in that grooves (2) are respectively arranged on the upper surface and the lower surface of the bottom plate (1). The bottom plate is simple in structure, convenient to use and capable of effectively improving resistance to impurity gas, further reducing gas flow speed, effectively temporarily storing attachments generated by ionization of the impurity gas in the arc chamber, reducing sparking (namely point discharge) in the arc chamber and further prolonging the service life of the bottom plate. 本发明提供一种注入机离子源弧室的底板，它包括注入机离子源弧室（3），在注入机离子源弧室（3）内设有底板（1），其特征在于：在底板（1）的上、下表面上分别设有凹槽（2）。本发明结构简单、使用方便，能有效的提高对杂质气体的阻力，进而降低气体流速，能有效暂存弧室电离杂质气体所产生的附着物，减少弧室内部打火（即尖端放电），进而提升底板的使用寿命。