Welding process of IGBT power module terminal and bare copper substrate

Welding process of IGBT power module terminal and bare copper substrate

The invention discloses a welding process of a GBT power module terminal and a bare copper substrate, and the process comprises the steps: S1, the terminal is enabled to be placed above the bare copper substrate, and a welding surface of the terminal is enabled to be in contact with a welding surfac...

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Hauptverfasser: LIU LEI, YANG XINGYUN, TAO SHAOYONG
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LIU LEI
YANG XINGYUN
TAO SHAOYONG
description The invention discloses a welding process of a GBT power module terminal and a bare copper substrate, and the process comprises the steps: S1, the terminal is enabled to be placed above the bare copper substrate, and a welding surface of the terminal is enabled to be in contact with a welding surface of the bare copper substrate; and S2, the bonding welding head applies ultrasonic energy to the terminal and the bare copper substrate, so that the terminal and the bare copper substrate are welded. The terminal comprises a first connecting part, a second connecting part and a welding part, the first connecting part is provided with a first back surface, the second connecting part is provided with a second back surface, the first back surface is connected with the second back surface, an included angle between the first back surface and the second back surface is 80-90 degrees, the width of the welding part is 1.5-2 times that of the second connecting part, and the welding part is welded with the bare copper subs
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Welding process of IGBT power module terminal and bare copper substrate
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