TECHNIQUES TO ADAPT DC BIAS OF VOLTAGE REGULATORS FOR MEMORY DEVICES AS A FUNCTION OF BANDWIDTH DEMAND

Techniques to adapt the DC bias of voltage regulators for memory devices as a function of bandwidth demand are described. In one example, a non-volatile memory device includes a plurality of voltage regulator slices, wherein outputs of the plurality of voltage regulators slices are tied together to provide a voltage to perform operations on the array. The voltage regulator slices can be enabled ordisabled based on a signal from a memory controller, such as an indication of an upcoming change in bandwidth demand for a rank including the memory device. 描述了根据带宽需求调整用于存储器件的电压调节器的DC偏置的技术。在一个示例中，非易失性存储器件包括多个电压调节器切片，其中，多个电压调节器切片的输出被捆绑在一起以提供电压来对阵列执行操作。可以基于来自存储控制器的信号来启用或禁用电压调节器切片，所述信号例如对包括存储器件的组的带宽需求上的即将到来的变化的指示。