Single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light-emitting diode, and production method and application thereof
The invention discloses a single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light emitting diode which comprises a p-GaN substrate (1). A Ni/Au electrode (3) is evaporated on one side of the upper surface of the p-GaN substrate (1), an n-Rh@ZnO single micro-wire (2) is placed on the other...
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| creator | MIAO CHANGZONG XU HAIYING JIANG MINGMING KAN CAIXIA |
| description | The invention discloses a single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light emitting diode which comprises a p-GaN substrate (1). A Ni/Au electrode (3) is evaporated on one side of the upper surface of the p-GaN substrate (1), an n-Rh@ZnO single micro-wire (2) is placed on the other side of the upper surface of the p-GaN substrate (1), and the upper surface of the n-Rh@ZnO singlemicro-wire (4) is covered with an ITO conductive electrode. The invention also discloses a production method and an application of the light emitting diode. An effective heterojunction structure is formed by the n-Rh@ZnO single micro-wire and the p-GaN substrate, the I-V characteristic of the heterojunction displays the characteristics of a rectifier diode, the single Rh@ZnO micro-wire heterojunction shows efficient and stable ultraviolet light emission under forward bias, the ultraviolet light emitting diode is enhanced, and the application of the ultraviolet light emitting diode in the fieldof ultraviolet light sour |
| format | Patent |
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A Ni/Au electrode (3) is evaporated on one side of the upper surface of the p-GaN substrate (1), an n-Rh@ZnO single micro-wire (2) is placed on the other side of the upper surface of the p-GaN substrate (1), and the upper surface of the n-Rh@ZnO singlemicro-wire (4) is covered with an ITO conductive electrode. The invention also discloses a production method and an application of the light emitting diode. An effective heterojunction structure is formed by the n-Rh@ZnO single micro-wire and the p-GaN substrate, the I-V characteristic of the heterojunction displays the characteristics of a rectifier diode, the single Rh@ZnO micro-wire heterojunction shows efficient and stable ultraviolet light emission under forward bias, the ultraviolet light emitting diode is enhanced, and the application of the ultraviolet light emitting diode in the fieldof ultraviolet light sour</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; NANOTECHNOLOGY ; PERFORMING OPERATIONS ; SEMICONDUCTOR DEVICES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; TRANSPORTING</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210115&DB=EPODOC&CC=CN&NR=112234127A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210115&DB=EPODOC&CC=CN&NR=112234127A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIAO CHANGZONG</creatorcontrib><creatorcontrib>XU HAIYING</creatorcontrib><creatorcontrib>JIANG MINGMING</creatorcontrib><creatorcontrib>KAN CAIXIA</creatorcontrib><title>Single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light-emitting diode, and production method and application thereof</title><description>The invention discloses a single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light emitting diode which comprises a p-GaN substrate (1). 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING |
| title | Single Rh@ZnO micro-wire heterojunction ultraviolet enhanced light-emitting diode, and production method and application thereof |
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