Semiconductor type sulfur-doped graphene film and preparation method thereof
The invention belongs to the technical field of semiconductor type sulfur-doped graphene film preparation, particularly relates to a semiconductor type sulfur-doped graphene film and a preparation method thereof, and aims to solve the problems that an existing doped graphene thin film is relatively...
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| creator | WANG ZHIHUI ZHI WEIFENG ZHANG PEILIN WU JIANJUN CHAI LICHUN ZHANG ZUOWEN |
| description | The invention belongs to the technical field of semiconductor type sulfur-doped graphene film preparation, particularly relates to a semiconductor type sulfur-doped graphene film and a preparation method thereof, and aims to solve the problems that an existing doped graphene thin film is relatively complex to prepare, poor in high-temperature resistance and seriously affected in service life. According to the scheme, the film comprises the following components in parts by weight: 20-30 parts of a sulfur source, 30-50 parts of graphite, 20-40 parts of silica gel, 5-10 parts of mica, 2-6 parts of ink stone, 6-12 parts of an adhesive, 6-12 parts of copper powder, 1-4 parts of conductive powder and 8-16 parts of carbon black N300, wherein the silica gel and the mica have high-temperature-resistant characteristics. The preparation method is convenient to operate, the semiconductor type sulfur-doped graphene film can be prepared, the high temperature resistance of the graphene film is improved, and the service life |
| format | Patent |
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According to the scheme, the film comprises the following components in parts by weight: 20-30 parts of a sulfur source, 30-50 parts of graphite, 20-40 parts of silica gel, 5-10 parts of mica, 2-6 parts of ink stone, 6-12 parts of an adhesive, 6-12 parts of copper powder, 1-4 parts of conductive powder and 8-16 parts of carbon black N300, wherein the silica gel and the mica have high-temperature-resistant characteristics. 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According to the scheme, the film comprises the following components in parts by weight: 20-30 parts of a sulfur source, 30-50 parts of graphite, 20-40 parts of silica gel, 5-10 parts of mica, 2-6 parts of ink stone, 6-12 parts of an adhesive, 6-12 parts of copper powder, 1-4 parts of conductive powder and 8-16 parts of carbon black N300, wherein the silica gel and the mica have high-temperature-resistant characteristics. The preparation method is convenient to operate, the semiconductor type sulfur-doped graphene film can be prepared, the high temperature resistance of the graphene film is improved, and the service life</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE LIME, MAGNESIA METALLURGY REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
| title | Semiconductor type sulfur-doped graphene film and preparation method thereof |
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