Semiconductor structure and manufacturing method thereof

The invention provides a semiconductor structure and a manufacturing method thereof. The structure comprises a semiconductor substrate, a gate stack arranged on the semiconductor substrate, a first oxide gap wall arranged along the side wall of the gate stack, a protection part arranged above the first oxide gap wall, and an interlayer dielectric layer arranged on the semiconductor substrate. Thefirst oxide spacer and the protective layer are interposed between the gate stack and the interlayer dielectric layer. According to the semiconductor structure and the manufacturing method thereof provided by the embodiment of the invention, a dynamic random access memory device is improved, so that the problem caused by component size reduction is solved. For example, the possibility of short circuit of the semiconductor assembly, which may be caused by filling the conductive material into the gap, is effectively reduced. 本发明提供了一种半导体结构及其制造方法，该结构包含半导体衬底、设置于半导体衬底之上的栅极堆栈、沿着栅极堆栈的侧壁设置的第一氧化物间隙壁、设置于第一氧化物间隙壁上方的保护部、以及设置于半导体衬底