Air gap type semiconductor device packaging structure and manufacturing method thereof
The invention provides an air gap type semiconductor device packaging structure and a manufacturing method thereof, and the method comprises the steps: forming a bonding layer with a first bonding layer opening on a carrier, placing a semiconductor chip on the bonding layer, forming a first cavity a...
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| creator | XU SITUO DI YUNXIANG LIU MENGBIN |
| description | The invention provides an air gap type semiconductor device packaging structure and a manufacturing method thereof, and the method comprises the steps: forming a bonding layer with a first bonding layer opening on a carrier, placing a semiconductor chip on the bonding layer, forming a first cavity at the first bonding layer opening, wherein the first cavity is at least aligned with a part of an active region of the semiconductor chip, then the semiconductor chip is plastically packaged on the carrier through a plastic packaging process, and finally, a through hole penetrating through the carrier is formed in a position aligned with an input/output electrode region of the semiconductor chip. An interconnection structure is formed on the face, different from the face where the bonding layeris formed, of the carrier, and the interconnection structure penetrates through the through hole and is electrically connected with the input/output electrode. According to the manufacturing method ofthe air gap type semicond |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES |
| title | Air gap type semiconductor device packaging structure and manufacturing method thereof |
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