Memristor based on two-dimensional transition metal material and preparation method of memristor

The invention discloses a memristor based on a two-dimensional transition metal material and a preparation method of the memristor. The memristor structurally comprises a silicon substrate, a bottom electrode layer and a top electrode layer which are sequentially stacked from bottom to top. A resistive layer is arranged between the bottom electrode layer and the top electrode layer, and the bottomelectrode layer and the top electrode layer are separated through the resistive layer, and the resistive layer is made of vanadium carbide. The types of the two-dimensional transition metal memristors are enriched, and the great promotion effect is realized on the relevant research of brain-like device simulation neurons and nerve synapses. 本发明揭示了一种基于二维过渡金属材料的忆阻器及其制备方法，忆阻器的结构包括由下至上按序依次层叠设置的硅衬底、底电极层以及顶电极层，在所述底电极层与所述顶电极层二者之间设置有阻变层且二者通过所述阻变层实现分隔；所述阻变层的材质为碳化钒。本发明丰富了二维过渡金属材料忆阻器的种类，对类脑器件模拟神经元以及神经突触的相关研究起到了很大的推动作用。