Power semiconductor module and method for determining development over time of operating parameter of power semiconductor module
The invention relates to a power semiconductor module and a method for development over time of the operating parameter of the power semiconductor module. The invention provides the power semiconductor module and a method used for determining the development of at least one first operation parameter...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a power semiconductor module and a method for development over time of the operating parameter of the power semiconductor module. The invention provides the power semiconductor module and a method used for determining the development of at least one first operation parameter over time of the power semiconductor module with at least one power semiconductor element on the algorithm. In order to determine multiple input module parameters and at least one input operating parameter used to determine the development overtime, the input operation parameter, and particularly atarget change curve along with the time of the output current of the power semiconductor module and the determination of the first operation parameter along with the time are determined by use of twokinds of algorithms. The first algorithm is used within a high first frequency range of the output current and the second algorithm is used in a low second frequency range of the output current.
本发明涉及功率半导体模块及其运行参数的随时间的发展的确定方法 |
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