MEMORY DEVICE AND OPERATION METHOD THEREOF

The present invention relates to a memory device and an operation method thereof. The operation method of the memory device comprising a first memory region and a second memory region comprises the steps of: reading first data from the first memory region and storing the read first data in a data buffer block, performing a first XOR operation on the first data provided from the data buffer block and second data read from the second memory region to generate first result data, writing the first data stored in the data buffer block in the second memory region, performing a second XOR operation on the first data and the first result data to generate the second data, storing the generated second data in the data buffer block, and writing the second data stored in the data buffer block in the first memory region. 本公开涉及存储器设备及其操作方法。一种包括第一存储器区域和第二存储器区域的存储器设备的操作方法，包括：从第一存储器区域读取第一数据并将读取的第一数据存储在数据缓冲器块中，对从数据缓冲器块提供的第一数据和从第二存储器区域读取的第二数据执行第一XOR运算以生成第一结果数据，将存储在数据缓冲器块中的第一数据写入第二存储器区域，对第一数据和第一结果数据执行第二XOR运算以生成第二数据，将生成的第二数据存储在数据缓