SEMICONDUCTOR RECESS FORMATION METHOD
The invention relates to a semiconductor recess formation method. Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The met...
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| creator | IMONIGIE JEROME A PANDAY ASHWIN KERLEY BRIAN J JEBARAJ ADRIEL JEBIN JACOB SAPRA SANJEEV |
| description | The invention relates to a semiconductor recess formation method. Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.
本申请涉及一种半导体凹陷的形成方法。描述了与在半导体结构中形成凹陷有关的方法、设备和系统。示例性方法包含使用高温酸和水稀释来蚀刻半导体结构。所述方法还包含使用室温酸和水以及表面改性化学品湿法蚀刻来蚀刻半导体结构。 |
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本申请涉及一种半导体凹陷的形成方法。描述了与在半导体结构中形成凹陷有关的方法、设备和系统。示例性方法包含使用高温酸和水稀释来蚀刻半导体结构。所述方法还包含使用室温酸和水以及表面改性化学品湿法蚀刻来蚀刻半导体结构。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201009&DB=EPODOC&CC=CN&NR=111755328A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201009&DB=EPODOC&CC=CN&NR=111755328A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IMONIGIE JEROME A</creatorcontrib><creatorcontrib>PANDAY ASHWIN</creatorcontrib><creatorcontrib>KERLEY BRIAN J</creatorcontrib><creatorcontrib>JEBARAJ ADRIEL JEBIN JACOB</creatorcontrib><creatorcontrib>SAPRA SANJEEV</creatorcontrib><title>SEMICONDUCTOR RECESS FORMATION METHOD</title><description>The invention relates to a semiconductor recess formation method. Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.
本申请涉及一种半导体凹陷的形成方法。描述了与在半导体结构中形成凹陷有关的方法、设备和系统。示例性方法包含使用高温酸和水稀释来蚀刻半导体结构。所述方法还包含使用室温酸和水以及表面改性化学品湿法蚀刻来蚀刻半导体结构。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFANdvX1dPb3cwl1DvEPUghydXYNDlZw8w_ydQzx9PdT8HUN8fB34WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoaG5qamxkYWjsbEqAEAuqQjgg</recordid><startdate>20201009</startdate><enddate>20201009</enddate><creator>IMONIGIE JEROME A</creator><creator>PANDAY ASHWIN</creator><creator>KERLEY BRIAN J</creator><creator>JEBARAJ ADRIEL JEBIN JACOB</creator><creator>SAPRA SANJEEV</creator><scope>EVB</scope></search><sort><creationdate>20201009</creationdate><title>SEMICONDUCTOR RECESS FORMATION METHOD</title><author>IMONIGIE JEROME A ; PANDAY ASHWIN ; KERLEY BRIAN J ; JEBARAJ ADRIEL JEBIN JACOB ; SAPRA SANJEEV</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111755328A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IMONIGIE JEROME A</creatorcontrib><creatorcontrib>PANDAY ASHWIN</creatorcontrib><creatorcontrib>KERLEY BRIAN J</creatorcontrib><creatorcontrib>JEBARAJ ADRIEL JEBIN JACOB</creatorcontrib><creatorcontrib>SAPRA SANJEEV</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IMONIGIE JEROME A</au><au>PANDAY ASHWIN</au><au>KERLEY BRIAN J</au><au>JEBARAJ ADRIEL JEBIN JACOB</au><au>SAPRA SANJEEV</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR RECESS FORMATION METHOD</title><date>2020-10-09</date><risdate>2020</risdate><abstract>The invention relates to a semiconductor recess formation method. Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.
本申请涉及一种半导体凹陷的形成方法。描述了与在半导体结构中形成凹陷有关的方法、设备和系统。示例性方法包含使用高温酸和水稀释来蚀刻半导体结构。所述方法还包含使用室温酸和水以及表面改性化学品湿法蚀刻来蚀刻半导体结构。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR RECESS FORMATION METHOD |
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