Surface modification method for silicon dioxide

The invention provides a surface modification method for silicon dioxide. The method comprises the following steps: cleaning the surface of a silicon dioxide sample; continuously heating the silicon dioxide sample at 490-510 DEG C for 30-35 minutes; hydroxylating the surface of the silicon dioxide s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHAI RUKUAN, LIU YUETIAN, HE YUTING, XUE LIANG
Format: Patent
Sprache:chi ; eng
Schlagworte:
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