Overvoltage protection device
Various embodiments of the present disclosure relate to overvoltage protection devices. Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes afirst diode made of a first semiconductor material having a bandgap width greater than that of silico...
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| creator | SIMONNET JEAN-MICHEL RASCUNA SIMONE NGO SOPHIE |
| description | Various embodiments of the present disclosure relate to overvoltage protection devices. Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes afirst diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
本公开的各实施例涉及过电压保护设备。提供了过电压保护电路。在一些实施例中，过电压保护电路包括：第一二极管，该第一二极管由具有大于硅的带隙宽度的带隙宽度的第一半导体材料制成。第二二极管被包括，并且第二二极管与第一二极管电交叉耦合。第二二极管由与不同于第一半导体材料的第二半导体材料制成。 |
| format | Patent |
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本公开的各实施例涉及过电压保护设备。提供了过电压保护电路。在一些实施例中，过电压保护电路包括：第一二极管，该第一二极管由具有大于硅的带隙宽度的带隙宽度的第一半导体材料制成。第二二极管被包括，并且第二二极管与第一二极管电交叉耦合。第二二极管由与不同于第一半导体材料的第二半导体材料制成。</description><language>chi ; eng</language><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRICITY ; EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS ; GENERATION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200915&DB=EPODOC&CC=CN&NR=111668824A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200915&DB=EPODOC&CC=CN&NR=111668824A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SIMONNET JEAN-MICHEL</creatorcontrib><creatorcontrib>RASCUNA SIMONE</creatorcontrib><creatorcontrib>NGO SOPHIE</creatorcontrib><title>Overvoltage protection device</title><description>Various embodiments of the present disclosure relate to overvoltage protection devices. Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes afirst diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
本公开的各实施例涉及过电压保护设备。提供了过电压保护电路。在一些实施例中，过电压保护电路包括：第一二极管，该第一二极管由具有大于硅的带隙宽度的带隙宽度的第一半导体材料制成。第二二极管被包括，并且第二二极管与第一二极管电交叉耦合。第二二极管由与不同于第一半导体材料的第二半导体材料制成。</description><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRICITY</subject><subject>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</subject><subject>GENERATION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD1L0stKsvPKUlMT1UoKMovSU0uyczPU0hJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGhmZmFhZGJo7GxKgBAPpqJJM</recordid><startdate>20200915</startdate><enddate>20200915</enddate><creator>SIMONNET JEAN-MICHEL</creator><creator>RASCUNA SIMONE</creator><creator>NGO SOPHIE</creator><scope>EVB</scope></search><sort><creationdate>20200915</creationdate><title>Overvoltage protection device</title><author>SIMONNET JEAN-MICHEL ; RASCUNA SIMONE ; NGO SOPHIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111668824A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRICITY</topic><topic>EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS</topic><topic>GENERATION</topic><toplevel>online_resources</toplevel><creatorcontrib>SIMONNET JEAN-MICHEL</creatorcontrib><creatorcontrib>RASCUNA SIMONE</creatorcontrib><creatorcontrib>NGO SOPHIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SIMONNET JEAN-MICHEL</au><au>RASCUNA SIMONE</au><au>NGO SOPHIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Overvoltage protection device</title><date>2020-09-15</date><risdate>2020</risdate><abstract>Various embodiments of the present disclosure relate to overvoltage protection devices. Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes afirst diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.
本公开的各实施例涉及过电压保护设备。提供了过电压保护电路。在一些实施例中，过电压保护电路包括：第一二极管，该第一二极管由具有大于硅的带隙宽度的带隙宽度的第一半导体材料制成。第二二极管被包括，并且第二二极管与第一二极管电交叉耦合。第二二极管由与不同于第一半导体材料的第二半导体材料制成。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS GENERATION |
| title | Overvoltage protection device |
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