Method for realizing multi-value non-volatile storage

The invention provides a method for realizing multi-value non-volatile storage, which optimizes the multi-value non-volatile storage performance of a resistive random access memory by improving the high-low state resistance ratio of the resistive random access memory and increasing the distinction d...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LAI YUNFENG, GONG ZEHONG, LIN PEIJIE, YU JINLING, CHENG SHUYING, ZHENG QIAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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