Method for realizing multi-value non-volatile storage

The invention provides a method for realizing multi-value non-volatile storage, which optimizes the multi-value non-volatile storage performance of a resistive random access memory by improving the high-low state resistance ratio of the resistive random access memory and increasing the distinction degree of each resistance state during multi-value storage. Multiple layers of resistive random mediacapable of stabilizing a high-resistance-state working condition conductive path of the resistive random access memory are arranged between electrodes of the resistive random access memory; the multiple layers of resistive random media comprise a first dielectric layer and a second dielectric layer; a potential barrier exists between interfaces of the first dielectric layer and the second dielectric layer; when the resistive random access memory is in a high-resistance working condition, the barrier increases the resistance value; metal nanoparticles capable of stabilizing a low-resistance-state working condition con