Diamond Schottky junction field effect transistor with vertical structure, and preparation method thereof

The invention provides a diamond Schottky junction field effect transistor with a vertical structure, and a preparation method thereof, and belongs to the technical field of semiconductors. The methodcomprises the following steps: growing a lightly doped p type diamond epitaxial layer on the front surface of a heavily doped P type diamond substrate; growing a heavily doped p type diamond epitaxial layer on the upper surface of a buffer layer; photoetching a source region pattern, and etching a columnar source region and a vertical channel; photoetching a source region pattern window, and depositing a source electrode metal to form a source electrode; depositing a drain electrode metal on the back surface of the heavily doped P type diamond substrate to form a drain electrode; depositing agate passivation layer; photoetching a gate morphology, depositing a gate metal, and stripping to form a gate electrode; depositing a device passivation layer; and photoetching to manufacture a electrode pattern. According to