Method for preparing crystalline silicon solar cell electrode
The invention discloses a method for preparing a crystalline silicon solar cell electrode. The method comprises the steps that S1, cured film layers are prepared at the positions, corresponding to allthe electrodes, of a silicon wafer substrate; S2, a groove is formed in the cured film layer in the...
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creator | YANG ERCUN ZHAO BENDING GU SHENGGANG YANG LIANZAN LU CHENGCHENG LIU HAIJIN JIANG ZHONGQIANG XIA LIPENG |
description | The invention discloses a method for preparing a crystalline silicon solar cell electrode. The method comprises the steps that S1, cured film layers are prepared at the positions, corresponding to allthe electrodes, of a silicon wafer substrate; S2, a groove is formed in the cured film layer in the electrode extending direction, the groove penetrates through the cured film layer, and the width ofthe groove is smaller than that of the cured film layer; S3, the groove is filled with the electrode slurry; and S4, drying and sintering are carried out, the cured film layer is volatilized, the electrode slurry is melted, and through cooling, the electrode slurry is recrystallized to form the electrode. In the process of preparing the electrode, the electrode slurry is supported and blocked bythe cured film layer, the slurry does not collapse or expand, the electrode grid line can be ensured to have a higher depth-to-width ratio, and the electrical performance of the cell is improved; theviscosity of the used electr |
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The method comprises the steps that S1, cured film layers are prepared at the positions, corresponding to allthe electrodes, of a silicon wafer substrate; S2, a groove is formed in the cured film layer in the electrode extending direction, the groove penetrates through the cured film layer, and the width ofthe groove is smaller than that of the cured film layer; S3, the groove is filled with the electrode slurry; and S4, drying and sintering are carried out, the cured film layer is volatilized, the electrode slurry is melted, and through cooling, the electrode slurry is recrystallized to form the electrode. 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The method comprises the steps that S1, cured film layers are prepared at the positions, corresponding to allthe electrodes, of a silicon wafer substrate; S2, a groove is formed in the cured film layer in the electrode extending direction, the groove penetrates through the cured film layer, and the width ofthe groove is smaller than that of the cured film layer; S3, the groove is filled with the electrode slurry; and S4, drying and sintering are carried out, the cured film layer is volatilized, the electrode slurry is melted, and through cooling, the electrode slurry is recrystallized to form the electrode. In the process of preparing the electrode, the electrode slurry is supported and blocked bythe cured film layer, the slurry does not collapse or expand, the electrode grid line can be ensured to have a higher depth-to-width ratio, and the electrical performance of the cell is improved; theviscosity of the used electr</abstract><oa>free_for_read</oa></addata></record> |
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title | Method for preparing crystalline silicon solar cell electrode |
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