Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

The invention relates to a semiconductor device and a method for manufacturing the same. To provide: a semiconductor device in which an insulating material layer does not contain reinforcement fiberssuch as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer,...

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Hauptverfasser: TAMAGAWA MICHIAKI, IWASAKI TOSHIHIRO, ISHIDO KIMINORI
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAMAGAWA MICHIAKI
IWASAKI TOSHIHIRO
ISHIDO KIMINORI
description The invention relates to a semiconductor device and a method for manufacturing the same. To provide: a semiconductor device in which an insulating material layer does not contain reinforcement fiberssuch as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer, a smaller diameter of a metal via, and a thinner interlayer thickness. The semiconductor device comprises an insulating material layer and a warping adjustment layer. The insulating material layer includes one or more semiconductor elements sealed with an insulating material that does not includereinforcing fibers, a plurality of metal thin film wiring layers, and metal vias that electrically connect the metal thin film wiring layers together and electrically connect electrodes of the semiconductor elements and the metal thin film wiring layers together; the warping adjustment layer is disposed on one main surface of the insulating material layer to counteract warpage of the insulating material layer to reduce war
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111524863A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111524863A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111524863A3</originalsourceid><addsrcrecordid>eNrjZLAKTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUUgDiuYm5pWmJSaXlBZl5qUrlGSkKhQn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ0NTIxMLM2NHY2LUAACJvS8k</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device and method for manufacturing the same</title><source>esp@cenet</source><creator>TAMAGAWA MICHIAKI ; IWASAKI TOSHIHIRO ; ISHIDO KIMINORI</creator><creatorcontrib>TAMAGAWA MICHIAKI ; IWASAKI TOSHIHIRO ; ISHIDO KIMINORI</creatorcontrib><description>The invention relates to a semiconductor device and a method for manufacturing the same. To provide: a semiconductor device in which an insulating material layer does not contain reinforcement fiberssuch as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer, a smaller diameter of a metal via, and a thinner interlayer thickness. The semiconductor device comprises an insulating material layer and a warping adjustment layer. The insulating material layer includes one or more semiconductor elements sealed with an insulating material that does not includereinforcing fibers, a plurality of metal thin film wiring layers, and metal vias that electrically connect the metal thin film wiring layers together and electrically connect electrodes of the semiconductor elements and the metal thin film wiring layers together; the warping adjustment layer is disposed on one main surface of the insulating material layer to counteract warpage of the insulating material layer to reduce war</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200811&amp;DB=EPODOC&amp;CC=CN&amp;NR=111524863A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200811&amp;DB=EPODOC&amp;CC=CN&amp;NR=111524863A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAMAGAWA MICHIAKI</creatorcontrib><creatorcontrib>IWASAKI TOSHIHIRO</creatorcontrib><creatorcontrib>ISHIDO KIMINORI</creatorcontrib><title>Semiconductor device and method for manufacturing the same</title><description>The invention relates to a semiconductor device and a method for manufacturing the same. To provide: a semiconductor device in which an insulating material layer does not contain reinforcement fiberssuch as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer, a smaller diameter of a metal via, and a thinner interlayer thickness. The semiconductor device comprises an insulating material layer and a warping adjustment layer. The insulating material layer includes one or more semiconductor elements sealed with an insulating material that does not includereinforcing fibers, a plurality of metal thin film wiring layers, and metal vias that electrically connect the metal thin film wiring layers together and electrically connect electrodes of the semiconductor elements and the metal thin film wiring layers together; the warping adjustment layer is disposed on one main surface of the insulating material layer to counteract warpage of the insulating material layer to reduce war</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAKTs3NTM7PSylNLskvUkhJLctMTlVIzEtRyE0tychPUUgDiuYm5pWmJSaXlBZl5qUrlGSkKhQn5qbyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ0NTIxMLM2NHY2LUAACJvS8k</recordid><startdate>20200811</startdate><enddate>20200811</enddate><creator>TAMAGAWA MICHIAKI</creator><creator>IWASAKI TOSHIHIRO</creator><creator>ISHIDO KIMINORI</creator><scope>EVB</scope></search><sort><creationdate>20200811</creationdate><title>Semiconductor device and method for manufacturing the same</title><author>TAMAGAWA MICHIAKI ; IWASAKI TOSHIHIRO ; ISHIDO KIMINORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111524863A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TAMAGAWA MICHIAKI</creatorcontrib><creatorcontrib>IWASAKI TOSHIHIRO</creatorcontrib><creatorcontrib>ISHIDO KIMINORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAMAGAWA MICHIAKI</au><au>IWASAKI TOSHIHIRO</au><au>ISHIDO KIMINORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device and method for manufacturing the same</title><date>2020-08-11</date><risdate>2020</risdate><abstract>The invention relates to a semiconductor device and a method for manufacturing the same. To provide: a semiconductor device in which an insulating material layer does not contain reinforcement fiberssuch as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer, a smaller diameter of a metal via, and a thinner interlayer thickness. The semiconductor device comprises an insulating material layer and a warping adjustment layer. The insulating material layer includes one or more semiconductor elements sealed with an insulating material that does not includereinforcing fibers, a plurality of metal thin film wiring layers, and metal vias that electrically connect the metal thin film wiring layers together and electrically connect electrodes of the semiconductor elements and the metal thin film wiring layers together; the warping adjustment layer is disposed on one main surface of the insulating material layer to counteract warpage of the insulating material layer to reduce war</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and method for manufacturing the same
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T14%3A09%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TAMAGAWA%20MICHIAKI&rft.date=2020-08-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN111524863A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true