Semiconductor device including data storage pattern and method of manufacturing the same

A semiconductor device including a data storage pattern and a method of manufacturing the same. The semiconductor device includes: first conductive lines on a substrate and extending in a first direction; second conductive lines on the first conductive lines and extending in a second direction; data...

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Hauptverfasser: SONG SEUL JI, PARK KYU SUL, PARK IL MOK
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creator SONG SEUL JI
PARK KYU SUL
PARK IL MOK
description A semiconductor device including a data storage pattern and a method of manufacturing the same. The semiconductor device includes: first conductive lines on a substrate and extending in a first direction; second conductive lines on the first conductive lines and extending in a second direction; data storage structures between the first and second conductive lines, wherein each of the data storagestructures includes a lower data storage electrode, a data storage pattern, and an upper data storage electrode; a width of an upper portion of the lower data storage electrode is smaller than a widthof a lower portion of the lower data storage electrode, a width of an upper portion of the data storage pattern is greater than a width of a lower portion of the data storage pattern, and the width of the upper portion of the lower data storage electrode is different from the width of the lower portion of the data storage pattern. 本发明构思涉及一种包括数据存储图案的半导体器件及其制造方法。该半导体器件包括:第一导线,在基板上且沿第一方向延伸;第二导线,在第一导线上且沿第二方向延伸;数据存储结构,在第一导线和第二
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The semiconductor device includes: first conductive lines on a substrate and extending in a first direction; second conductive lines on the first conductive lines and extending in a second direction; data storage structures between the first and second conductive lines, wherein each of the data storagestructures includes a lower data storage electrode, a data storage pattern, and an upper data storage electrode; a width of an upper portion of the lower data storage electrode is smaller than a widthof a lower portion of the lower data storage electrode, a width of an upper portion of the data storage pattern is greater than a width of a lower portion of the data storage pattern, and the width of the upper portion of the lower data storage electrode is different from the width of the lower portion of the data storage pattern. 本发明构思涉及一种包括数据存储图案的半导体器件及其制造方法。该半导体器件包括:第一导线,在基板上且沿第一方向延伸;第二导线,在第一导线上且沿第二方向延伸;数据存储结构,在第一导线和第二</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200804&amp;DB=EPODOC&amp;CC=CN&amp;NR=111490062A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200804&amp;DB=EPODOC&amp;CC=CN&amp;NR=111490062A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SONG SEUL JI</creatorcontrib><creatorcontrib>PARK KYU SUL</creatorcontrib><creatorcontrib>PARK IL MOK</creatorcontrib><title>Semiconductor device including data storage pattern and method of manufacturing the same</title><description>A semiconductor device including a data storage pattern and a method of manufacturing the same. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device including data storage pattern and method of manufacturing the same
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