Method for manufacturing semiconductor device

A manufacturing method of a semiconductor device includes: forming a second conductive type layer (6, 41, 51) over a first conductive type layer (5, 40, 50); and forming a trench (11, 43, 53) by etching the second conductivity type layer by a plasma etching process to expose the first conductivity t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KAJI AIKO, YAMANOUCHI YOSHIAKI, SAITO JUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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