SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET
One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), andwherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but...
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| creator | HATA HIDEO TAO YUKI |
| description | One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), andwherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but 50 at% or less, the tin content ASn is from 20 at% to 80 at% (inclusive), and the zirconium content AZr is more than 0 at% but 40 at% or less; the Zn content AZn satisfies formula (1); the ratio of the maximum value to the minimum value among the plurality of measured specific resistances is 3 orless; and the specific resistances are 5*10 (omega.cm) or less. (1): AZn/(AZn+ASn) |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111465713A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111465713A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111465713A3</originalsourceid><addsrcrecordid>eNrjZDAIDggNCXEN8vRzVwhxDHJ3DVHwdQTxHX0UHP1cFDCkeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGhiZmpuaGxozExagBQ-iaL</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET</title><source>esp@cenet</source><creator>HATA HIDEO ; TAO YUKI</creator><creatorcontrib>HATA HIDEO ; TAO YUKI</creatorcontrib><description>One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), andwherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but 50 at% or less, the tin content ASn is from 20 at% to 80 at% (inclusive), and the zirconium content AZr is more than 0 at% but 40 at% or less; the Zn content AZn satisfies formula (1); the ratio of the maximum value to the minimum value among the plurality of measured specific resistances is 3 orless; and the specific resistances are 5*10<-1> (omega.cm) or less. (1): AZn/(AZn+ASn)<=0.6
本发明的一实施方式为一种溅镀靶材，其包含锌(Zn)的氧化物、锡(Sn)的氧化物及锆(Zr)的氧化物，其中相对于氧(O)以外的所有元素，锌的含量A为超过0at％且50at％以下，锡的含量A为20at％以上且80at％以下，及锆的含量A为超过0at％且40at％以下，而且Zn的含量A满足下述式(1)；经测定的多个比电阻值中最大值相对于最小值的比为3以下，及所述比电阻值为5×10[Ω·cm]以下；而且所述溅镀靶材不含有铟(In)。A/(A+A)≦0.6·····(1)。</description><language>chi ; eng</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; CONCRETE ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; LIME, MAGNESIA ; METALLURGY ; PHYSICS ; REFRACTORIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200728&DB=EPODOC&CC=CN&NR=111465713A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200728&DB=EPODOC&CC=CN&NR=111465713A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HATA HIDEO</creatorcontrib><creatorcontrib>TAO YUKI</creatorcontrib><title>SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET</title><description>One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), andwherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but 50 at% or less, the tin content ASn is from 20 at% to 80 at% (inclusive), and the zirconium content AZr is more than 0 at% but 40 at% or less; the Zn content AZn satisfies formula (1); the ratio of the maximum value to the minimum value among the plurality of measured specific resistances is 3 orless; and the specific resistances are 5*10<-1> (omega.cm) or less. (1): AZn/(AZn+ASn)<=0.6
本发明的一实施方式为一种溅镀靶材，其包含锌(Zn)的氧化物、锡(Sn)的氧化物及锆(Zr)的氧化物，其中相对于氧(O)以外的所有元素，锌的含量A为超过0at％且50at％以下，锡的含量A为20at％以上且80at％以下，及锆的含量A为超过0at％且40at％以下，而且Zn的含量A满足下述式(1)；经测定的多个比电阻值中最大值相对于最小值的比为3以下，及所述比电阻值为5×10[Ω·cm]以下；而且所述溅镀靶材不含有铟(In)。A/(A+A)≦0.6·····(1)。</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>CONCRETE</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAIDggNCXEN8vRzVwhxDHJ3DVHwdQTxHX0UHP1cFDCkeRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGhiZmpuaGxozExagBQ-iaL</recordid><startdate>20200728</startdate><enddate>20200728</enddate><creator>HATA HIDEO</creator><creator>TAO YUKI</creator><scope>EVB</scope></search><sort><creationdate>20200728</creationdate><title>SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET</title><author>HATA HIDEO ; TAO YUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111465713A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>CONCRETE</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>HATA HIDEO</creatorcontrib><creatorcontrib>TAO YUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HATA HIDEO</au><au>TAO YUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET</title><date>2020-07-28</date><risdate>2020</risdate><abstract>One embodiment of the present invention is a sputtering target material which contains an oxide of zinc (Zn), an oxide of tin (Sn) and an oxide of zirconium (Zr), but does not contain indium (In), andwherein: relative to all elements other than oxygen (O), the zinc content AZn is more than 0 at% but 50 at% or less, the tin content ASn is from 20 at% to 80 at% (inclusive), and the zirconium content AZr is more than 0 at% but 40 at% or less; the Zn content AZn satisfies formula (1); the ratio of the maximum value to the minimum value among the plurality of measured specific resistances is 3 orless; and the specific resistances are 5*10<-1> (omega.cm) or less. (1): AZn/(AZn+ASn)<=0.6
本发明的一实施方式为一种溅镀靶材，其包含锌(Zn)的氧化物、锡(Sn)的氧化物及锆(Zr)的氧化物，其中相对于氧(O)以外的所有元素，锌的含量A为超过0at％且50at％以下，锡的含量A为20at％以上且80at％以下，及锆的含量A为超过0at％且40at％以下，而且Zn的含量A满足下述式(1)；经测定的多个比电阻值中最大值相对于最小值的比为3以下，及所述比电阻值为5×10[Ω·cm]以下；而且所述溅镀靶材不含有铟(In)。A/(A+A)≦0.6·····(1)。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONCRETE DIFFUSION TREATMENT OF METALLIC MATERIAL INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY PHYSICS REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | SPUTTERING TARGET MATERIAL AND SPUTTERING TARGET |
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