Nitrogen-doped CVD diamond laser crystal and preparation method thereof
The invention relates to the technical field of laser science. The invention further discloses a nitrogen-doped CVD diamond laser crystal. The nitrogen-doped CVD diamond laser crystal comprises a CVDdiamond crystal, an antireflection film and a reflecting film, and the antireflection film is plated...
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| creator | LIU HONGMING ZHAO FENXIA |
| description | The invention relates to the technical field of laser science. The invention further discloses a nitrogen-doped CVD diamond laser crystal. The nitrogen-doped CVD diamond laser crystal comprises a CVDdiamond crystal, an antireflection film and a reflecting film, and the antireflection film is plated on the front surface of the CVD diamond crystal; the reflecting film is plated on the rear surfaceof the CVD diamond crystal; the antireflection film is formed by superposing a magnesium fluoride film, a hafnium dioxide film and a titanium dioxide film, and the reflecting film comprises the following components in parts by mass: 30-40 parts of titanium dioxide powder, 5-8 parts of aluminum oxide powder, 30-35 parts of optical epoxy resin glue, 2-3 parts of a brightening agent and 8-12 parts ofan auxiliary agent; the reflecting film is prepared by adopting the following method: adding titanium dioxide powder and aluminum oxide powder with corresponding weights into a stirring tank for mixing at a stirring speed of 8 |
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The nitrogen-doped CVD diamond laser crystal comprises a CVDdiamond crystal, an antireflection film and a reflecting film, and the antireflection film is plated on the front surface of the CVD diamond crystal; the reflecting film is plated on the rear surfaceof the CVD diamond crystal; the antireflection film is formed by superposing a magnesium fluoride film, a hafnium dioxide film and a titanium dioxide film, and the reflecting film comprises the following components in parts by mass: 30-40 parts of titanium dioxide powder, 5-8 parts of aluminum oxide powder, 30-35 parts of optical epoxy resin glue, 2-3 parts of a brightening agent and 8-12 parts ofan auxiliary agent; the reflecting film is prepared by adopting the following method: adding titanium dioxide powder and aluminum oxide powder with corresponding weights into a stirring tank for mixing at a stirring speed of 8</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAUhuEsDqLew_ECOoQK4iipP1MncS2H5qsNpDnhJIt3r4MX4PTCw7s2tz5UlRdS4yXDk3t25AMvkjxFLlAa9V0qR-KvZEVm5Rok0YI6i6c6QyHT1qwmjgW7Xzdmf7083L1BlgEl84iEOrjeWnuwtj0dz-0_zwdH1jO9</recordid><startdate>20200714</startdate><enddate>20200714</enddate><creator>LIU HONGMING</creator><creator>ZHAO FENXIA</creator><scope>EVB</scope></search><sort><creationdate>20200714</creationdate><title>Nitrogen-doped CVD diamond laser crystal and preparation method thereof</title><author>LIU HONGMING ; 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The invention further discloses a nitrogen-doped CVD diamond laser crystal. The nitrogen-doped CVD diamond laser crystal comprises a CVDdiamond crystal, an antireflection film and a reflecting film, and the antireflection film is plated on the front surface of the CVD diamond crystal; the reflecting film is plated on the rear surfaceof the CVD diamond crystal; the antireflection film is formed by superposing a magnesium fluoride film, a hafnium dioxide film and a titanium dioxide film, and the reflecting film comprises the following components in parts by mass: 30-40 parts of titanium dioxide powder, 5-8 parts of aluminum oxide powder, 30-35 parts of optical epoxy resin glue, 2-3 parts of a brightening agent and 8-12 parts ofan auxiliary agent; the reflecting film is prepared by adopting the following method: adding titanium dioxide powder and aluminum oxide powder with corresponding weights into a stirring tank for mixing at a stirring speed of 8</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Nitrogen-doped CVD diamond laser crystal and preparation method thereof |
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