Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment
The invention discloses a magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment. The magnetic part structure is arranged outside a semiconductor reactioncavity in a surrounding manner. The magnetic part structure is characterized by comprising an annular...
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| creator | YU ZHENDUO |
| description | The invention discloses a magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment. The magnetic part structure is arranged outside a semiconductor reactioncavity in a surrounding manner. The magnetic part structure is characterized by comprising an annular supporting part, multiple magnetic part frames and multiple magnetic parts; the multiple magneticpart frames are arranged on the annular supporting part and distributed in the circumferential direction of the annular supporting part; the magnetic parts are correspondingly mounted in the magneticpart frames, so that preset first mounting angles are formed between the axes of the magnetic parts and the axis of the reaction chamber, and the first mounting angles can be adjusted; and the actingrange of magnetic fields of side magnets for the surfaces of wafers can be adjusted by adjusting the first mounting angles formed between the axes of the side magnets and the axis of the reaction chamber, the directions of the m |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111411338A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111411338A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111411338A3</originalsourceid><addsrcrecordid>eNrjZEj2TUzPSy3JTFYoSCwqUSguKSpNLiktSlXIzFMoTs3NTM7PSwGK5BcppBaWZhbkpuaVKCTmpaDJ5YINKcoH6ikoLSlJLcrMS0do4GFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpQN3xzn6GhoYmhobGxhaOxsSoAQB0bEAg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment</title><source>esp@cenet</source><creator>YU ZHENDUO</creator><creatorcontrib>YU ZHENDUO</creatorcontrib><description>The invention discloses a magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment. The magnetic part structure is arranged outside a semiconductor reactioncavity in a surrounding manner. The magnetic part structure is characterized by comprising an annular supporting part, multiple magnetic part frames and multiple magnetic parts; the multiple magneticpart frames are arranged on the annular supporting part and distributed in the circumferential direction of the annular supporting part; the magnetic parts are correspondingly mounted in the magneticpart frames, so that preset first mounting angles are formed between the axes of the magnetic parts and the axis of the reaction chamber, and the first mounting angles can be adjusted; and the actingrange of magnetic fields of side magnets for the surfaces of wafers can be adjusted by adjusting the first mounting angles formed between the axes of the side magnets and the axis of the reaction chamber, the directions of the m</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200714&DB=EPODOC&CC=CN&NR=111411338A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200714&DB=EPODOC&CC=CN&NR=111411338A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YU ZHENDUO</creatorcontrib><title>Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment</title><description>The invention discloses a magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment. The magnetic part structure is arranged outside a semiconductor reactioncavity in a surrounding manner. The magnetic part structure is characterized by comprising an annular supporting part, multiple magnetic part frames and multiple magnetic parts; the multiple magneticpart frames are arranged on the annular supporting part and distributed in the circumferential direction of the annular supporting part; the magnetic parts are correspondingly mounted in the magneticpart frames, so that preset first mounting angles are formed between the axes of the magnetic parts and the axis of the reaction chamber, and the first mounting angles can be adjusted; and the actingrange of magnetic fields of side magnets for the surfaces of wafers can be adjusted by adjusting the first mounting angles formed between the axes of the side magnets and the axis of the reaction chamber, the directions of the m</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj2TUzPSy3JTFYoSCwqUSguKSpNLiktSlXIzFMoTs3NTM7PSwGK5BcppBaWZhbkpuaVKCTmpaDJ5YINKcoH6ikoLSlJLcrMS0do4GFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpQN3xzn6GhoYmhobGxhaOxsSoAQB0bEAg</recordid><startdate>20200714</startdate><enddate>20200714</enddate><creator>YU ZHENDUO</creator><scope>EVB</scope></search><sort><creationdate>20200714</creationdate><title>Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment</title><author>YU ZHENDUO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111411338A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>YU ZHENDUO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YU ZHENDUO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment</title><date>2020-07-14</date><risdate>2020</risdate><abstract>The invention discloses a magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment. The magnetic part structure is arranged outside a semiconductor reactioncavity in a surrounding manner. The magnetic part structure is characterized by comprising an annular supporting part, multiple magnetic part frames and multiple magnetic parts; the multiple magneticpart frames are arranged on the annular supporting part and distributed in the circumferential direction of the annular supporting part; the magnetic parts are correspondingly mounted in the magneticpart frames, so that preset first mounting angles are formed between the axes of the magnetic parts and the axis of the reaction chamber, and the first mounting angles can be adjusted; and the actingrange of magnetic fields of side magnets for the surfaces of wafers can be adjusted by adjusting the first mounting angles formed between the axes of the side magnets and the axis of the reaction chamber, the directions of the m</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Magnetic part structure in semiconductor equipment and semiconductor magnetron sputtering equipment |
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