Method for improving photoetching mark of double patterning process

The invention discloses a method for improving a photoetching mark of a double patterning process. The method comprises the following steps: providing a photoetching mark grating; determining the sidewall thickness of the double patterning process; determining a segmentation interval of the grating according to the size of the photoetching mark grating and the side wall thickness; segmenting thegrating into a plurality of parts according to the segmentation interval; and executing the double patterning process. According to the invention, the grating used for forming the photoetching mark issegmented, so that the contrast of the photoetching mark is prevented from being reduced after a double patterning process, and the accuracy of mark measurement is improved. 本申请公开了一种双重构图工艺光刻标记的改善方法，方法包括：提供一个光刻标记光栅；确定双重构图工艺的侧墙壁厚；根据所述光刻标记光栅的尺寸和所述侧墙壁厚确定所述光栅的分割间距；根据所述分割间距将光栅分割为若干部分；执行所述双重构图工艺。本申请通过将用于构成光刻标记的光栅(grating)进行分割，以在经过双重构图工艺之后防止光刻标记对比度的下降，从而提升了标记测量的准确性。