THIN FILM TRANSISTOR

This thin film transistor is a top-gate coplanar type transistor and comprises a source, a drain, a gate, and a semiconductor layer. The semiconductor layer has a first low-resistance region for the source, and a second low-resistance region for the drain. The source and the drain are electrically connected via the first low-resistance region, the semiconductor layer, and the second low-resistanceregion. The semiconductor layer is constituted of an oxide semiconductor including gallium (Ga), zinc (Zn), and tin (Sn). 一种薄膜晶体管，其为顶栅共面型的薄膜晶体管，具有源极、漏极、栅极、及半导体层；前述半导体层具有前述源极用的第1低电阻区域、和前述漏极用的第2低电阻区域；前述源极及前述漏极借助前述第1低电阻区域、前述半导体层、及前述第2低电阻区域进行电连接，前述半导体层由包含镓(Ga)、锌(Zn)、及锡(Sn)的氧化物系的半导体构成。