OPERATING METHOD FOR WET ETCHING SYSTEM, METHOD OF FORMING DEVICE USING SAME AND WET ETCHING SYSTEM
The invention provides an operating method for a wet etching system, a method of forming a semiconductor device using the same and a wet etching system. The operating method for a wet etching system includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates...
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creator | MUN CHANG-SUP YANG JUN-YOUL SHIM WOO-GWAN CHA SE-HO KO YONG-SUN JEONG SANG-HOON KIM DONG-HA KIM TAE-HEON |
description | The invention provides an operating method for a wet etching system, a method of forming a semiconductor device using the same and a wet etching system. The operating method for a wet etching system includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etchingapparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.
本发明提供一种湿蚀刻系统操作方法、利用其形成半导体器件的方法和湿蚀刻系统,其中该湿蚀刻系统操作方法包括:提供具 |
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本发明提供一种湿蚀刻系统操作方法、利用其形成半导体器件的方法和湿蚀刻系统,其中该湿蚀刻系统操作方法包括:提供具</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200630&DB=EPODOC&CC=CN&NR=111354658A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200630&DB=EPODOC&CC=CN&NR=111354658A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MUN CHANG-SUP</creatorcontrib><creatorcontrib>YANG JUN-YOUL</creatorcontrib><creatorcontrib>SHIM WOO-GWAN</creatorcontrib><creatorcontrib>CHA SE-HO</creatorcontrib><creatorcontrib>KO YONG-SUN</creatorcontrib><creatorcontrib>JEONG SANG-HOON</creatorcontrib><creatorcontrib>KIM DONG-HA</creatorcontrib><creatorcontrib>KIM TAE-HEON</creatorcontrib><title>OPERATING METHOD FOR WET ETCHING SYSTEM, METHOD OF FORMING DEVICE USING SAME AND WET ETCHING SYSTEM</title><description>The invention provides an operating method for a wet etching system, a method of forming a semiconductor device using the same and a wet etching system. The operating method for a wet etching system includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etchingapparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.
本发明提供一种湿蚀刻系统操作方法、利用其形成半导体器件的方法和湿蚀刻系统,其中该湿蚀刻系统操作方法包括:提供具</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZEj2D3ANcgzx9HNX8HUN8fB3UXDzD1IIdw1RcA1x9gAJB0cGh7j66sCk_d1AKnxBMi6uYZ7OrgqhwWBljr6uCo5-Llj08jCwpiXmFKfyQmluBkU3kArd1IL8-NTigsTk1LzUknhnP0NDQ2NTEzNTC0djYtQAAPNEM_A</recordid><startdate>20200630</startdate><enddate>20200630</enddate><creator>MUN CHANG-SUP</creator><creator>YANG JUN-YOUL</creator><creator>SHIM WOO-GWAN</creator><creator>CHA SE-HO</creator><creator>KO YONG-SUN</creator><creator>JEONG SANG-HOON</creator><creator>KIM DONG-HA</creator><creator>KIM TAE-HEON</creator><scope>EVB</scope></search><sort><creationdate>20200630</creationdate><title>OPERATING METHOD FOR WET ETCHING SYSTEM, METHOD OF FORMING DEVICE USING SAME AND WET ETCHING SYSTEM</title><author>MUN CHANG-SUP ; YANG JUN-YOUL ; SHIM WOO-GWAN ; CHA SE-HO ; KO YONG-SUN ; JEONG SANG-HOON ; KIM DONG-HA ; KIM TAE-HEON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111354658A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MUN CHANG-SUP</creatorcontrib><creatorcontrib>YANG JUN-YOUL</creatorcontrib><creatorcontrib>SHIM WOO-GWAN</creatorcontrib><creatorcontrib>CHA SE-HO</creatorcontrib><creatorcontrib>KO YONG-SUN</creatorcontrib><creatorcontrib>JEONG SANG-HOON</creatorcontrib><creatorcontrib>KIM DONG-HA</creatorcontrib><creatorcontrib>KIM TAE-HEON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MUN CHANG-SUP</au><au>YANG JUN-YOUL</au><au>SHIM WOO-GWAN</au><au>CHA SE-HO</au><au>KO YONG-SUN</au><au>JEONG SANG-HOON</au><au>KIM DONG-HA</au><au>KIM TAE-HEON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OPERATING METHOD FOR WET ETCHING SYSTEM, METHOD OF FORMING DEVICE USING SAME AND WET ETCHING SYSTEM</title><date>2020-06-30</date><risdate>2020</risdate><abstract>The invention provides an operating method for a wet etching system, a method of forming a semiconductor device using the same and a wet etching system. The operating method for a wet etching system includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etchingapparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.
本发明提供一种湿蚀刻系统操作方法、利用其形成半导体器件的方法和湿蚀刻系统,其中该湿蚀刻系统操作方法包括:提供具</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | OPERATING METHOD FOR WET ETCHING SYSTEM, METHOD OF FORMING DEVICE USING SAME AND WET ETCHING SYSTEM |
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