Method of heating SOC film on wafer and heating apparatus
The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is...
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| creator | LIM JONG-KILL JANG SUNGKUN YOO JIYONG |
| description | The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus. The invention also provides a heating apparatus.
本发明提供了一种加热晶圆上的旋涂(SOC)膜的方法。方法包括步骤S401至S405。在步骤S401中，提供加热装置。加热装置包括烘烤盘和电磁波发生器。在步骤S402中，通过设置在烘烤盘中的加热单元对烘烤盘进行加热。在步骤S403中，将晶圆放置在加热装置的烘烤盘上。在步骤S404中，电磁波发生器生成电磁波以加热SOC膜。电磁波发生器生成的电磁波的频率在1THz至100THz的范围内。在步骤S405中，将晶圆从加热装置的烘烤盘中移除。本发明还提供一种加 |
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本发明提供了一种加热晶圆上的旋涂(SOC)膜的方法。方法包括步骤S401至S405。在步骤S401中，提供加热装置。加热装置包括烘烤盘和电磁波发生器。在步骤S402中，通过设置在烘烤盘中的加热单元对烘烤盘进行加热。在步骤S403中，将晶圆放置在加热装置的烘烤盘上。在步骤S404中，电磁波发生器生成电磁波以加热SOC膜。电磁波发生器生成的电磁波的频率在1THz至100THz的范围内。在步骤S405中，将晶圆从加热装置的烘烤盘中移除。本发明还提供一种加</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200630&DB=EPODOC&CC=CN&NR=111352313A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200630&DB=EPODOC&CC=CN&NR=111352313A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIM JONG-KILL</creatorcontrib><creatorcontrib>JANG SUNGKUN</creatorcontrib><creatorcontrib>YOO JIYONG</creatorcontrib><title>Method of heating SOC film on wafer and heating apparatus</title><description>The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus. The invention also provides a heating apparatus.
本发明提供了一种加热晶圆上的旋涂(SOC)膜的方法。方法包括步骤S401至S405。在步骤S401中，提供加热装置。加热装置包括烘烤盘和电磁波发生器。在步骤S402中，通过设置在烘烤盘中的加热单元对烘烤盘进行加热。在步骤S403中，将晶圆放置在加热装置的烘烤盘上。在步骤S404中，电磁波发生器生成电磁波以加热SOC膜。电磁波发生器生成的电磁波的频率在1THz至100THz的范围内。在步骤S405中，将晶圆从加热装置的烘烤盘中移除。本发明还提供一种加</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD0TS3JyE9RyE9TyEhNLMnMS1cI9ndWSMvMyVXIz1MoT0xLLVJIzEuByyYWFCQWJZaUFvMwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknhnP0NDQ2NTI2NDY0djYtQAAMKPLaE</recordid><startdate>20200630</startdate><enddate>20200630</enddate><creator>LIM JONG-KILL</creator><creator>JANG SUNGKUN</creator><creator>YOO JIYONG</creator><scope>EVB</scope></search><sort><creationdate>20200630</creationdate><title>Method of heating SOC film on wafer and heating apparatus</title><author>LIM JONG-KILL ; JANG SUNGKUN ; YOO JIYONG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111352313A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIM JONG-KILL</creatorcontrib><creatorcontrib>JANG SUNGKUN</creatorcontrib><creatorcontrib>YOO JIYONG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIM JONG-KILL</au><au>JANG SUNGKUN</au><au>YOO JIYONG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method of heating SOC film on wafer and heating apparatus</title><date>2020-06-30</date><risdate>2020</risdate><abstract>The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus. The invention also provides a heating apparatus.
本发明提供了一种加热晶圆上的旋涂(SOC)膜的方法。方法包括步骤S401至S405。在步骤S401中，提供加热装置。加热装置包括烘烤盘和电磁波发生器。在步骤S402中，通过设置在烘烤盘中的加热单元对烘烤盘进行加热。在步骤S403中，将晶圆放置在加热装置的烘烤盘上。在步骤S404中，电磁波发生器生成电磁波以加热SOC膜。电磁波发生器生成的电磁波的频率在1THz至100THz的范围内。在步骤S405中，将晶圆从加热装置的烘烤盘中移除。本发明还提供一种加</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Method of heating SOC film on wafer and heating apparatus |
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