METHOD FOR MANUFACTURING NON-VOLATILE MEMORY

A method for manufacturing a non-volatile memory, comprising the following steps: forming a gate oxide layer (60) on a substrate (50); forming a stacked capacitor of a memory unit by subjecting logicgate polycrystalline silicon (10, 10') to a deposition process at least twice; removing excess logic gate polycrystalline silicon (10, 10') by means of an etching process to form a memory transistor and a peripheral logic transistor. By forming a stacked capacitor of a memory unit by means of at least two deposition processes, the method manufactures a memory during a standard logic process such that the process for manufacturing a memory is simpler, has good compatibility with logic processes and is low cost. 一种非挥发性存储器的制造方法，包括步骤：在基底（50）上形成栅氧化层（60）；将逻辑栅极多晶硅（10,10'）通过至少两次沉积过程后，形成存储单元的叠层电容；通过蚀刻工艺移除多余的逻辑栅极多晶硅（10,10'），形成存储晶体管和外围逻辑晶体管。本发明所述方法，通过至少两次沉积形成存储晶体管的叠层电容，于标准逻辑工艺中制造出存储器，使得存储器的制造工艺更简单，与逻辑工艺兼容性好，成本低。