Chemical mechanical polishing apparatus for controlling polishing uniformity
A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around...
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| creator | BAE SANG-WON KIM IN-KWON JANG SUN-JAE LEE HYO-SAN PARK SEUNG-HO LEE WOO-IN |
| description | A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainerring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.
一种化学机械抛光(CMP)装置包括：抛光台板上的抛光垫；抛光垫上的抛光头，该抛光头具有用于将晶片保持在抛光垫上的隔膜、以及用于馈送抛光浆料的抛光浆料馈送线；以及保持环，围绕隔膜并与抛光垫接触以防止晶片脱离，该保持环包括连接到抛光浆料馈送线的抛光浆料馈送入口，以将抛光浆料馈送到抛光垫上。 |
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一种化学机械抛光(CMP)装置包括：抛光台板上的抛光垫；抛光垫上的抛光头，该抛光头具有用于将晶片保持在抛光垫上的隔膜、以及用于馈送抛光浆料的抛光浆料馈送线；以及保持环，围绕隔膜并与抛光垫接触以防止晶片脱离，该保持环包括连接到抛光浆料馈送线的抛光浆料馈送入口，以将抛光浆料馈送到抛光垫上。</description><language>chi ; eng</language><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; TRANSPORTING</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200619&DB=EPODOC&CC=CN&NR=111300258A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200619&DB=EPODOC&CC=CN&NR=111300258A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BAE SANG-WON</creatorcontrib><creatorcontrib>KIM IN-KWON</creatorcontrib><creatorcontrib>JANG SUN-JAE</creatorcontrib><creatorcontrib>LEE HYO-SAN</creatorcontrib><creatorcontrib>PARK SEUNG-HO</creatorcontrib><creatorcontrib>LEE WOO-IN</creatorcontrib><title>Chemical mechanical polishing apparatus for controlling polishing uniformity</title><description>A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainerring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.
一种化学机械抛光(CMP)装置包括：抛光台板上的抛光垫；抛光垫上的抛光头，该抛光头具有用于将晶片保持在抛光垫上的隔膜、以及用于馈送抛光浆料的抛光浆料馈送线；以及保持环，围绕隔膜并与抛光垫接触以防止晶片脱离，该保持环包括连接到抛光浆料馈送线的抛光浆料馈送入口，以将抛光浆料馈送到抛光垫上。</description><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBxzkjNzUxOzFHITU3OSMwDMwvyczKLMzLz0hUSCwoSixJLSosV0vKLFJLz80qK8nNyQDIINaV5mUDJ3MySSh4G1rTEnOJUXijNzaDo5hri7KGbWpAfn1pckJicmpdaEu_sZ2hoaGxgYGRq4WhMjBoADt42yw</recordid><startdate>20200619</startdate><enddate>20200619</enddate><creator>BAE SANG-WON</creator><creator>KIM IN-KWON</creator><creator>JANG SUN-JAE</creator><creator>LEE HYO-SAN</creator><creator>PARK SEUNG-HO</creator><creator>LEE WOO-IN</creator><scope>EVB</scope></search><sort><creationdate>20200619</creationdate><title>Chemical mechanical polishing apparatus for controlling polishing uniformity</title><author>BAE SANG-WON ; KIM IN-KWON ; JANG SUN-JAE ; LEE HYO-SAN ; PARK SEUNG-HO ; LEE WOO-IN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111300258A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>BAE SANG-WON</creatorcontrib><creatorcontrib>KIM IN-KWON</creatorcontrib><creatorcontrib>JANG SUN-JAE</creatorcontrib><creatorcontrib>LEE HYO-SAN</creatorcontrib><creatorcontrib>PARK SEUNG-HO</creatorcontrib><creatorcontrib>LEE WOO-IN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BAE SANG-WON</au><au>KIM IN-KWON</au><au>JANG SUN-JAE</au><au>LEE HYO-SAN</au><au>PARK SEUNG-HO</au><au>LEE WOO-IN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical mechanical polishing apparatus for controlling polishing uniformity</title><date>2020-06-19</date><risdate>2020</risdate><abstract>A chemical mechanical polishing (CMP) apparatus includes a polishing pad on a polishing platen, a polishing head on the polishing pad, the polishing head having a membrane to hold a wafer on the polishing pad, and a polishing slurry feeding line to feed a polishing slurry, and a retainer ring around the membrane and in contact with the polishing pad to prevent detachment of the wafer, the retainerring including a polishing slurry feeding inlet connected to the polishing slurry feeding line to feed the polishing slurry onto the polishing pad.
一种化学机械抛光(CMP)装置包括：抛光台板上的抛光垫；抛光垫上的抛光头，该抛光头具有用于将晶片保持在抛光垫上的隔膜、以及用于馈送抛光浆料的抛光浆料馈送线；以及保持环，围绕隔膜并与抛光垫接触以防止晶片脱离，该保持环包括连接到抛光浆料馈送线的抛光浆料馈送入口，以将抛光浆料馈送到抛光垫上。</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING TRANSPORTING |
| title | Chemical mechanical polishing apparatus for controlling polishing uniformity |
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