Base for epitaxial equipment and epitaxial growth equipment
The invention discloses a base for epitaxial equipment and epitaxial growth equipment. The base is disc-shaped, a groove is formed in the upper surface of the base, and the groove comprises the groovebottom surface and the groove side wall; a plurality of air passages extending upwards from the bott...
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| creator | SHENG FANGYU |
| description | The invention discloses a base for epitaxial equipment and epitaxial growth equipment. The base is disc-shaped, a groove is formed in the upper surface of the base, and the groove comprises the groovebottom surface and the groove side wall; a plurality of air passages extending upwards from the bottom surface of the base to the side wall of the groove are formed in the base; and an air inlet of each air passage is formed in the bottom face of the base, and an air outlet of each air passage is formed in the groove side wall. Airflow can enter from the air inlets in the bottom face of the baseand is discharged from the air outlets, close to the edge area of a wafer, of the groove side wall, the airflow at the edge position of the wafer on the base is changed, the concentration of reactiongas in the edge area of the wafer is diluted, the growth rate at the edge is reduced, and therefore the edge thickness of the wafer is reduced, and the thickness uniformity of the edge of the wafer isimproved.
本发明公开一种用于外延设备的基座以 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN111235551A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN111235551A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN111235551A3</originalsourceid><addsrcrecordid>eNrjZLB2SixOVUjLL1JILcgsSazITMxRSC0szSzITc0rUUjMS0ESTy_KLy_JQEjzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ0MjY1NTU0NHY2LUAADJ6y-0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Base for epitaxial equipment and epitaxial growth equipment</title><source>esp@cenet</source><creator>SHENG FANGYU</creator><creatorcontrib>SHENG FANGYU</creatorcontrib><description>The invention discloses a base for epitaxial equipment and epitaxial growth equipment. The base is disc-shaped, a groove is formed in the upper surface of the base, and the groove comprises the groovebottom surface and the groove side wall; a plurality of air passages extending upwards from the bottom surface of the base to the side wall of the groove are formed in the base; and an air inlet of each air passage is formed in the bottom face of the base, and an air outlet of each air passage is formed in the groove side wall. Airflow can enter from the air inlets in the bottom face of the baseand is discharged from the air outlets, close to the edge area of a wafer, of the groove side wall, the airflow at the edge position of the wafer on the base is changed, the concentration of reactiongas in the edge area of the wafer is diluted, the growth rate at the edge is reduced, and therefore the edge thickness of the wafer is reduced, and the thickness uniformity of the edge of the wafer isimproved.
本发明公开一种用于外延设备的基座以</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200605&DB=EPODOC&CC=CN&NR=111235551A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200605&DB=EPODOC&CC=CN&NR=111235551A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHENG FANGYU</creatorcontrib><title>Base for epitaxial equipment and epitaxial growth equipment</title><description>The invention discloses a base for epitaxial equipment and epitaxial growth equipment. The base is disc-shaped, a groove is formed in the upper surface of the base, and the groove comprises the groovebottom surface and the groove side wall; a plurality of air passages extending upwards from the bottom surface of the base to the side wall of the groove are formed in the base; and an air inlet of each air passage is formed in the bottom face of the base, and an air outlet of each air passage is formed in the groove side wall. Airflow can enter from the air inlets in the bottom face of the baseand is discharged from the air outlets, close to the edge area of a wafer, of the groove side wall, the airflow at the edge position of the wafer on the base is changed, the concentration of reactiongas in the edge area of the wafer is diluted, the growth rate at the edge is reduced, and therefore the edge thickness of the wafer is reduced, and the thickness uniformity of the edge of the wafer isimproved.
本发明公开一种用于外延设备的基座以</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB2SixOVUjLL1JILcgsSazITMxRSC0szSzITc0rUUjMS0ESTy_KLy_JQEjzMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQ0MjY1NTU0NHY2LUAADJ6y-0</recordid><startdate>20200605</startdate><enddate>20200605</enddate><creator>SHENG FANGYU</creator><scope>EVB</scope></search><sort><creationdate>20200605</creationdate><title>Base for epitaxial equipment and epitaxial growth equipment</title><author>SHENG FANGYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111235551A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SHENG FANGYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHENG FANGYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Base for epitaxial equipment and epitaxial growth equipment</title><date>2020-06-05</date><risdate>2020</risdate><abstract>The invention discloses a base for epitaxial equipment and epitaxial growth equipment. The base is disc-shaped, a groove is formed in the upper surface of the base, and the groove comprises the groovebottom surface and the groove side wall; a plurality of air passages extending upwards from the bottom surface of the base to the side wall of the groove are formed in the base; and an air inlet of each air passage is formed in the bottom face of the base, and an air outlet of each air passage is formed in the groove side wall. Airflow can enter from the air inlets in the bottom face of the baseand is discharged from the air outlets, close to the edge area of a wafer, of the groove side wall, the airflow at the edge position of the wafer on the base is changed, the concentration of reactiongas in the edge area of the wafer is diluted, the growth rate at the edge is reduced, and therefore the edge thickness of the wafer is reduced, and the thickness uniformity of the edge of the wafer isimproved.
本发明公开一种用于外延设备的基座以</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN111235551A |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Base for epitaxial equipment and epitaxial growth equipment |
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