Pretreatment method of graphene growth substrate

The invention discloses a pretreatment method of a graphene growth substrate. The method comprises the following steps of by using a copper foil or a copper-nickel alloy foil as a substrate, preliminarily polishing the substrate, annealing the substrate in a tube furnace, taking the annealed substrate out of the furnace, polishing the substrate again, and heating and oxidizing the substrate on a heating table to complete the pretreatment, wherein the pretreated substrate can be used for chemical vapor deposition growth of graphene. According to the pretreatment method, the roughness of the copper or copper-nickel alloy substrate can be reduced, the purity of the substrate is improved, active sites on the surface of the substrate are reduced, finally the effect of reducing the nucleation density of graphene is achieved, so that preparation of large single crystal graphene and large-area few-layer graphene with uniform thickness within the range of 2-5 layers is realized. 本发明公开了一种石墨烯生长基底的预处理方法，该方法以铜箔或铜镍合金箔作为基底，