METHODS TO CLEAN CHEMICAL MECHANICAL POLISHING PADS

The invention provides methods to clean chemical mechanical polishing pads. Provided herein are chemical-mechanical planarization (CMP) systems and methods to reduce metal particle pollution on dressing disks and polishing pads. Such methods may include contacting a dressing disk and at least one conductive element with an electrolyte solution and applying direct current (DC) power to the dressingdisk and the at least one conductive element. 本文提供用于清洁研磨垫的方法。本文提供减少修整盘及研磨垫上的金属颗粒污染的化学机械平坦化系统及方法。所述方法可包括将修整盘及至少一导电元件接触电解液接触，并施加直流功率到修整盘及所述至少一导电元件。