SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF
The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surf...
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| creator | LEE YUNG-YAO WANG WENIH |
| description | The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.
本揭露实施例涉及半导体制造方法及其设备。本揭露提供一种用于制造半导体结构的方法。所述方法包含使感光层形成于半导体衬底的第一表面上。所述感光层具有顶面。所述方法还包含获得所述半导体结构的所述第一表面的第一轮廓及获得所述感光层的所述顶面的第二轮廓。所述方法还包含根据所述第一轮廓及所述第二轮廓来计算所述半导体衬底的竖直位移分布。本发明实施例还揭露一种用于制造半导体结构的设备。 |
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本揭露实施例涉及半导体制造方法及其设备。本揭露提供一种用于制造半导体结构的方法。所述方法包含使感光层形成于半导体衬底的第一表面上。所述感光层具有顶面。所述方法还包含获得所述半导体结构的所述第一表面的第一轮廓及获得所述感光层的所述顶面的第二轮廓。所述方法还包含根据所述第一轮廓及所述第二轮廓来计算所述半导体衬底的竖直位移分布。本发明实施例还揭露一种用于制造半导体结构的设备。</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200505&DB=EPODOC&CC=CN&NR=111105997A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200505&DB=EPODOC&CC=CN&NR=111105997A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE YUNG-YAO</creatorcontrib><creatorcontrib>WANG WENIH</creatorcontrib><title>SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF</title><description>The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.
本揭露实施例涉及半导体制造方法及其设备。本揭露提供一种用于制造半导体结构的方法。所述方法包含使感光层形成于半导体衬底的第一表面上。所述感光层具有顶面。所述方法还包含获得所述半导体结构的所述第一表面的第一轮廓及获得所述感光层的所述顶面的第二轮廓。所述方法还包含根据所述第一轮廓及所述第二轮廓来计算所述半导体衬底的竖直位移分布。本发明实施例还揭露一种用于制造半导体结构的设备。</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAIdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNX8HUN8fB3UXD0A-KAAMcgx5DQYIUQD9cgV383HgbWtMSc4lReKM3NoOjmGuLsoZtakB-fWlyQmJyal1oS7-xnCAQGppaW5o7GxKgBAIuxKMg</recordid><startdate>20200505</startdate><enddate>20200505</enddate><creator>LEE YUNG-YAO</creator><creator>WANG WENIH</creator><scope>EVB</scope></search><sort><creationdate>20200505</creationdate><title>SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF</title><author>LEE YUNG-YAO ; WANG WENIH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111105997A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE YUNG-YAO</creatorcontrib><creatorcontrib>WANG WENIH</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE YUNG-YAO</au><au>WANG WENIH</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF</title><date>2020-05-05</date><risdate>2020</risdate><abstract>The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.
本揭露实施例涉及半导体制造方法及其设备。本揭露提供一种用于制造半导体结构的方法。所述方法包含使感光层形成于半导体衬底的第一表面上。所述感光层具有顶面。所述方法还包含获得所述半导体结构的所述第一表面的第一轮廓及获得所述感光层的所述顶面的第二轮廓。所述方法还包含根据所述第一轮廓及所述第二轮廓来计算所述半导体衬底的竖直位移分布。本发明实施例还揭露一种用于制造半导体结构的设备。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR MANUFACTURING METHOD AND APPARATUS THEREOF |
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