ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD
Provided is an etching solution which is for etching a multilayer film composed of a copper layer having a large film thickness and a titanium base layer, and can be used even when the concentration of metal ions is 8,000 ppm or higher. The etching solution includes (a) hydrogen peroxide, (b) a fluo...
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| creator | SHIRAHAMA YUJI CHAKUNO MAKOTO |
| description | Provided is an etching solution which is for etching a multilayer film composed of a copper layer having a large film thickness and a titanium base layer, and can be used even when the concentration of metal ions is 8,000 ppm or higher. The etching solution includes (a) hydrogen peroxide, (b) a fluorine ion supply source, (c) azoles, (d) a hydrogen peroxide stabilizer, (e) an organic acid, (f) amines, and (g) water, wherein a methane sulfonic acid and one organic acid among lactic acid, succinic acid, glutaric acid, and malonic acid are used as the organic acid, or lactic acid is used alone asthe organic acid.
本发明提供一种蚀刻液，用于蚀刻膜厚较厚的铜层和基底钛层的多层膜，该蚀刻液即使在金属离子浓度达到8000ppm以上时也能够使用。该蚀刻液含有(a)过氧化氢、(b)氟离子供给源、(c)唑类、(d)过氧化氢稳定剂、(e)有机酸、(f)胺类和(g)水，所述有机酸使用甲磺酸与选自乳酸、琥珀酸、戊二酸、丙二酸中的一种有机酸，或者单独使用乳酸。 |
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本发明提供一种蚀刻液，用于蚀刻膜厚较厚的铜层和基底钛层的多层膜，该蚀刻液即使在金属离子浓度达到8000ppm以上时也能够使用。该蚀刻液含有(a)过氧化氢、(b)氟离子供给源、(c)唑类、(d)过氧化氢稳定剂、(e)有机酸、(f)胺类和(g)水，所述有机酸使用甲磺酸与选自乳酸、琥珀酸、戊二酸、丙二酸中的一种有机酸，或者单独使用乳酸。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200501&DB=EPODOC&CC=CN&NR=111094627A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200501&DB=EPODOC&CC=CN&NR=111094627A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIRAHAMA YUJI</creatorcontrib><creatorcontrib>CHAKUNO MAKOTO</creatorcontrib><title>ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD</title><description>Provided is an etching solution which is for etching a multilayer film composed of a copper layer having a large film thickness and a titanium base layer, and can be used even when the concentration of metal ions is 8,000 ppm or higher. The etching solution includes (a) hydrogen peroxide, (b) a fluorine ion supply source, (c) azoles, (d) a hydrogen peroxide stabilizer, (e) an organic acid, (f) amines, and (g) water, wherein a methane sulfonic acid and one organic acid among lactic acid, succinic acid, glutaric acid, and malonic acid are used as the organic acid, or lactic acid is used alone asthe organic acid.
本发明提供一种蚀刻液，用于蚀刻膜厚较厚的铜层和基底钛层的多层膜，该蚀刻液即使在金属离子浓度达到8000ppm以上时也能够使用。该蚀刻液含有(a)过氧化氢、(b)氟离子供给源、(c)唑类、(d)过氧化氢稳定剂、(e)有机酸、(f)胺类和(g)水，所述有机酸使用甲磺酸与选自乳酸、琥珀酸、戊二酸、丙二酸中的一种有机酸，或者单独使用乳酸。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhwDXH28PRzVwj29wkN8fT3U3D0c1GACTr7-zm7-oUEOYa4Krj5Byn4hvqEePo4RroGKbh5-vjqoCj2dQ3x8HfhYWBNS8wpTuWF0twMim4gFbqpBfnxqcUFicmpeakl8c5-hoaGBpYmZkbmjsbEqAEAYnAu2A</recordid><startdate>20200501</startdate><enddate>20200501</enddate><creator>SHIRAHAMA YUJI</creator><creator>CHAKUNO MAKOTO</creator><scope>EVB</scope></search><sort><creationdate>20200501</creationdate><title>ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD</title><author>SHIRAHAMA YUJI ; CHAKUNO MAKOTO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111094627A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIRAHAMA YUJI</creatorcontrib><creatorcontrib>CHAKUNO MAKOTO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIRAHAMA YUJI</au><au>CHAKUNO MAKOTO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD</title><date>2020-05-01</date><risdate>2020</risdate><abstract>Provided is an etching solution which is for etching a multilayer film composed of a copper layer having a large film thickness and a titanium base layer, and can be used even when the concentration of metal ions is 8,000 ppm or higher. The etching solution includes (a) hydrogen peroxide, (b) a fluorine ion supply source, (c) azoles, (d) a hydrogen peroxide stabilizer, (e) an organic acid, (f) amines, and (g) water, wherein a methane sulfonic acid and one organic acid among lactic acid, succinic acid, glutaric acid, and malonic acid are used as the organic acid, or lactic acid is used alone asthe organic acid.
本发明提供一种蚀刻液，用于蚀刻膜厚较厚的铜层和基底钛层的多层膜，该蚀刻液即使在金属离子浓度达到8000ppm以上时也能够使用。该蚀刻液含有(a)过氧化氢、(b)氟离子供给源、(c)唑类、(d)过氧化氢稳定剂、(e)有机酸、(f)胺类和(g)水，所述有机酸使用甲磺酸与选自乳酸、琥珀酸、戊二酸、丙二酸中的一种有机酸，或者单独使用乳酸。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | ETCHING SOLUTION AND ETCHING CONCENTRATE FOR MULTILAYER FILM, AND ETCHING METHOD |
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