Method for forming barrier layer
This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.
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| creator | C.D. DOBSON M.G.M. HARRIS K.E. BUCHANAN |
| description | This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step. |
| format | Patent |
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In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.</description><edition>7</edition><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030604&DB=EPODOC&CC=CN&NR=1110844C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20030604&DB=EPODOC&CC=CN&NR=1110844C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>C.D. 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DOBSON</creatorcontrib><creatorcontrib>M.G.M. HARRIS</creatorcontrib><creatorcontrib>K.E. BUCHANAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>C.D. DOBSON</au><au>M.G.M. HARRIS</au><au>K.E. BUCHANAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming barrier layer</title><date>2003-06-04</date><risdate>2003</risdate><abstract>This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Method for forming barrier layer |
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