THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME
A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal...
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| creator | ASARI SHIN OHTA ATSUSHI OSONO SHUJI ZAMA HIDEAKI KIKUCHI TORU |
| description | A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal oxide layer that is configured from silicon oxide is formed on the surface of the active layer by plasma CVD. A second metal oxide layer that is configured from aluminum oxide is formed on the surface of the first metal oxide layer by ALD. A gate electrode is formed on the surface of the second metal oxide layer.
本发明的一个技术方案所涉及的薄膜晶体管的制造方法包括在衬底上形成活性层。以能够与上述活性层电连接的方式形成源极区域和漏极区域。通过等离子体CVD在上述活性层的表面形成由氧化硅构成的第一金属氧化物层。通过ALD在上述第一金属氧化物层的表面形成由氧化铝构成的第二金属氧化物层。在上述第二金属氧化物层的表面形成栅电极。 |
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本发明的一个技术方案所涉及的薄膜晶体管的制造方法包括在衬底上形成活性层。以能够与上述活性层电连接的方式形成源极区域和漏极区域。通过等离子体CVD在上述活性层的表面形成由氧化硅构成的第一金属氧化物层。通过ALD在上述第一金属氧化物层的表面形成由氧化铝构成的第二金属氧化物层。在上述第二金属氧化物层的表面形成栅电极。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200421&DB=EPODOC&CC=CN&NR=111052397A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200421&DB=EPODOC&CC=CN&NR=111052397A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ASARI SHIN</creatorcontrib><creatorcontrib>OHTA ATSUSHI</creatorcontrib><creatorcontrib>OSONO SHUJI</creatorcontrib><creatorcontrib>ZAMA HIDEAKI</creatorcontrib><creatorcontrib>KIKUCHI TORU</creatorcontrib><title>THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME</title><description>A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal oxide layer that is configured from silicon oxide is formed on the surface of the active layer by plasma CVD. A second metal oxide layer that is configured from aluminum oxide is formed on the surface of the first metal oxide layer by ALD. A gate electrode is formed on the surface of the second metal oxide layer.
本发明的一个技术方案所涉及的薄膜晶体管的制造方法包括在衬底上形成活性层。以能够与上述活性层电连接的方式形成源极区域和漏极区域。通过等离子体CVD在上述活性层的表面形成由氧化硅构成的第一金属氧化物层。通过ALD在上述第一金属氧化物层的表面形成由氧化铝构成的第二金属氧化物层。在上述第二金属氧化物层的表面形成栅电极。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAK8fD0U3Dz9PFVCAly9Av2DA7xD1Jw9HNR8HUN8fB3UXADcgOC_F1CnT393BWCHX1deRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvLOfoaGhgamRsaW5ozExagBu9iaz</recordid><startdate>20200421</startdate><enddate>20200421</enddate><creator>ASARI SHIN</creator><creator>OHTA ATSUSHI</creator><creator>OSONO SHUJI</creator><creator>ZAMA HIDEAKI</creator><creator>KIKUCHI TORU</creator><scope>EVB</scope></search><sort><creationdate>20200421</creationdate><title>THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME</title><author>ASARI SHIN ; OHTA ATSUSHI ; OSONO SHUJI ; ZAMA HIDEAKI ; KIKUCHI TORU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN111052397A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>ASARI SHIN</creatorcontrib><creatorcontrib>OHTA ATSUSHI</creatorcontrib><creatorcontrib>OSONO SHUJI</creatorcontrib><creatorcontrib>ZAMA HIDEAKI</creatorcontrib><creatorcontrib>KIKUCHI TORU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ASARI SHIN</au><au>OHTA ATSUSHI</au><au>OSONO SHUJI</au><au>ZAMA HIDEAKI</au><au>KIKUCHI TORU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME</title><date>2020-04-21</date><risdate>2020</risdate><abstract>A method for producing a thin film transistor according to one embodiment of the present invention comprises the formation of an active layer on a substrate. A source region and a drain region are formed such that the regions are able to be electrically connected with the active layer. A first metal oxide layer that is configured from silicon oxide is formed on the surface of the active layer by plasma CVD. A second metal oxide layer that is configured from aluminum oxide is formed on the surface of the first metal oxide layer by ALD. A gate electrode is formed on the surface of the second metal oxide layer.
本发明的一个技术方案所涉及的薄膜晶体管的制造方法包括在衬底上形成活性层。以能够与上述活性层电连接的方式形成源极区域和漏极区域。通过等离子体CVD在上述活性层的表面形成由氧化硅构成的第一金属氧化物层。通过ALD在上述第一金属氧化物层的表面形成由氧化铝构成的第二金属氧化物层。在上述第二金属氧化物层的表面形成栅电极。</abstract><oa>free_for_read</oa></addata></record> |
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| title | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME |
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